All MOSFET. SIR406DP Datasheet

 

SIR406DP Datasheet and Replacement


   Type Designator: SIR406DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 33 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 561 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: SO-8
 

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SIR406DP Datasheet (PDF)

 ..1. Size:339K  vishay
 sir406dp.pdf pdf_icon

SIR406DP

New ProductSiR406DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition 0.0038 at VGS = 10 V 40g TrenchFET Gen III Power MOSFET25 15.8 nC0.0048 at VGS = 4.5 V 100 % Rg Tested40g 100 % Avalanche Tested Compliant to RoHS Directive 2002/9

 9.1. Size:518K  vishay
 sir401dp.pdf pdf_icon

SIR406DP

New ProductSiR401DPVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 DefinitionVDS (V) RDS(on) () Max.ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0032 at VGS = - 10 V - 50 100% Rg and UIS Tested- 20 0.0042 at VGS = - 4.5 V - 50 97 nC Compliant to RoHS Directive 2002/95/EC0.0077 at VGS = -

 9.2. Size:86K  vishay
 sir408dp.pdf pdf_icon

SIR406DP

SiR408DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0063 at VGS = 10 V TrenchFET Power MOSFET50a25 9.3 nC 100 % Rg Tested0.008 at VGS = 4.5 V 50a 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIO

 9.3. Size:321K  vishay
 sir402dp.pdf pdf_icon

SIR406DP

SiR402DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.006 at VGS = 10 V TrenchFET Power MOSFET3530 12 nC 100 % Rg Tested0.008 at VGS = 4.5 V 35 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIONSS

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Datasheet: SIR172ADP , SIR172DP , SIR316DP , SIR330DP , SIR401DP , SIR402DP , SIR403EDP , SIR404DP , AON6414A , SIR408DP , SIR410DP , SIR412DP , SIR414DP , SIR416DP , SIR418DP , SIR424DP , SIR426DP .

History: CS1N60C3H

Keywords - SIR406DP MOSFET datasheet

 SIR406DP cross reference
 SIR406DP equivalent finder
 SIR406DP lookup
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