SIR410DP MOSFET Datasheet: N-Ch, 20V, 23A. Full specification with pinout and replacement list

SIR410DP Specs and Replacement

Type Designator: SIR410DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: SO-8

SIR410DP substitution

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SIR410DP datasheet

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SiR410DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0048 at VGS = 10 V 35 100 % Rg Tested 20 12.7 nC 100 % UIS Tested 0.0063 at VGS = 4.5 V 35 APPLICATIONS PowerPAK SO-8 DC/DC Converter - Notebook - POL S 6.15 mm 5.15 mm 1 D S 2 S 3 ... See More ⇒

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New Product SiR414DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0028 at VGS = 10 V 50 TrenchFET Power MOSFET 40 38 nC 0.0032 at VGS = 4.5 V 50 100 % Rg Tested 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Synchronous Rectificat... See More ⇒

9.2. Size:107K vishay
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SiR418DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) Qg Optimized 0.005 at VGS = 10 V 40 40 24 100 % Rg Tested 0.006 at VGS = 4.5 V 40 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SO-8 DC/DC Conver... See More ⇒