SIR412DP MOSFET Datasheet: N-Ch, 25V, 13.4A. Full specification with pinout and replacement list

SIR412DP Specs and Replacement

Type Designator: SIR412DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SO-8

SIR412DP substitution

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SIR412DP datasheet

..1. Size:323K vishay
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SiR412DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 20 Low Thermal Resistance PowerPAK 25 4.9 nC 0.015 at VGS = 4.5 V 20 Package with Low 1.07 mm Profile Optimized for High-Side Synchrono... See More ⇒

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SiR410DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0048 at VGS = 10 V 35 100 % Rg Tested 20 12.7 nC 100 % UIS Tested 0.0063 at VGS = 4.5 V 35 APPLICATIONS PowerPAK SO-8 DC/DC Converter - Notebook - POL S 6.15 mm 5.15 mm 1 D S 2 S 3 ... See More ⇒

9.2. Size:337K vishay
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New Product SiR414DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0028 at VGS = 10 V 50 TrenchFET Power MOSFET 40 38 nC 0.0032 at VGS = 4.5 V 50 100 % Rg Tested 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Synchronous Rectificat... See More ⇒

9.3. Size:471K vishay
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