SIR428DP MOSFET Datasheet: N-Ch, 30V, 17.4A. Full specification with pinout and replacement list

SIR428DP Specs and Replacement

Type Designator: SIR428DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 274 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: SO-8

SIR428DP substitution

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SIR428DP datasheet

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SiR426DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0105 at VGS = 10 V Material categorization 30a 40 9.3 nC For definitions of compliance please see 0.0125 at VGS = 4.5 V 30a www.vishay.com/doc?99912 PowerPAK SO-8 APPLICATIONS D DC/DC C... See More ⇒

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SiR422DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0066 at VGS = 10 V TrenchFET Power MOSFET 40 40 16.1 nC 100 % Rg Tested 0.008 at VGS = 4.5 V 40 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATION... See More ⇒

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SiR424DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0055 at VGS = 10 V 30a TrenchFET Power MOSFET 20 9.6 nC 100 % Rg Tested 0.0074 at VGS = 4.5 V 30a 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS ... See More ⇒