SIR438DP Datasheet and Replacement
Type Designator: SIR438DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 1140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: SO-8
SIR438DP substitution
SIR438DP Datasheet (PDF)
sir438dp.pdf

New ProductSiR438DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Gen III Power MOSFET0.0018 at VGS = 10 V 60 100 % Rg Tested25 32.6 nC0.0023 at VGS = 4.5 V 60 100 % Avalanche TestedPowerPAK SO-8APPLICATIONS Server- Low S
sir436dp.pdf

SiR436DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0046 at VGS = 10 V 40 100 % Rg Tested25 13 nC 100 % UIS Tested0.0062 at VGS = 4.5 V 40APPLICATIONSPowerPAK SO-8 Low-Side Switch Server, VRMS6.15 mm 5.15 mmD1S2S3G4
sir432dp.pdf

SiR432DPVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.0306 at VGS = 10 V 28.4100 15.5 nC 100 % Rg Tested0.0327 at VGS = 7.5 V 27.5 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8AP
Datasheet: SIR414DP , SIR416DP , SIR418DP , SIR424DP , SIR426DP , SIR428DP , SIR432DP , SIR436DP , 2N7000 , SIR440DP , SIR460DP , SIR462DP , SIR464DP , SIR466DP , SIR468DP , SIR470DP , SIR472ADP .
Keywords - SIR438DP MOSFET datasheet
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SIR438DP equivalent finder
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History: RXQ040N03 | WFY5N03



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