SIR438DP Datasheet and Replacement
Type Designator: SIR438DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 1140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: SO-8
SIR438DP Datasheet (PDF)
sir438dp.pdf

New ProductSiR438DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Gen III Power MOSFET0.0018 at VGS = 10 V 60 100 % Rg Tested25 32.6 nC0.0023 at VGS = 4.5 V 60 100 % Avalanche TestedPowerPAK SO-8APPLICATIONS Server- Low S
sir436dp.pdf

SiR436DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0046 at VGS = 10 V 40 100 % Rg Tested25 13 nC 100 % UIS Tested0.0062 at VGS = 4.5 V 40APPLICATIONSPowerPAK SO-8 Low-Side Switch Server, VRMS6.15 mm 5.15 mmD1S2S3G4
sir432dp.pdf

SiR432DPVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.0306 at VGS = 10 V 28.4100 15.5 nC 100 % Rg Tested0.0327 at VGS = 7.5 V 27.5 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8AP
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: DH100P18E | DMP3010LPS | STF12N65M5 | HM2300D
Keywords - SIR438DP MOSFET datasheet
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History: DH100P18E | DMP3010LPS | STF12N65M5 | HM2300D



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