SIR472DP Specs and Replacement
Type Designator: SIR472DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 195 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SO-8
SIR472DP substitution
- MOSFET ⓘ Cross-Reference Search
SIR472DP datasheet
sir472dp.pdf
SiR472DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET RoHS 0.012 at VGS = 10 V 20 Low Thermal Resistance PowerPAK COMPLIANT 30 6.8 nC 0.015 at VGS = 4.5 V 20 Package with Low 1.07 mm Profile Optimized for High-Side Synchronous Rectifier PowerPAK SO-... See More ⇒
sir472adp.pdf
SiR472ADP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a, g Qg (TYP.) 100 % Rg and UIS tested 0.0090 at VGS = 10 V 18 30 9 nC Optimized for high-side switching in 0.0115 at VGS = 4.5 V 18 synchronous buck converters PowerPAK SO-8 Single Material categorizat... See More ⇒
sir476dp.pdf
New Product SiR476DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Gen III Power MOSFET RoHS 0.0017 at VGS = 10 V 60 COMPLIANT 25 42.5 nC 100 % Rg Tested 0.0021 at VGS = 4.5 V 60 100 % Avalanche Tested APPLICATIONS PowerPAK SO-8 VRM, POL, Server High C... See More ⇒
Detailed specifications: SIR440DP, SIR460DP, SIR462DP, SIR464DP, SIR466DP, SIR468DP, SIR470DP, SIR472ADP, IRFP260, SIR474DP, SIR476DP, SIR484DP, SIR492DP, SIR494DP, SIR496DP, SIR640ADP, SIR640DP
Keywords - SIR472DP MOSFET specs
SIR472DP cross reference
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