SIR474DP Specs and Replacement

Type Designator: SIR474DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 205 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: SO-8

SIR474DP substitution

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SIR474DP datasheet

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SIR474DP

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SIR474DP

SiR472ADP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a, g Qg (TYP.) 100 % Rg and UIS tested 0.0090 at VGS = 10 V 18 30 9 nC Optimized for high-side switching in 0.0115 at VGS = 4.5 V 18 synchronous buck converters PowerPAK SO-8 Single Material categorizat... See More ⇒

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SIR474DP

New Product SiR476DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Gen III Power MOSFET RoHS 0.0017 at VGS = 10 V 60 COMPLIANT 25 42.5 nC 100 % Rg Tested 0.0021 at VGS = 4.5 V 60 100 % Avalanche Tested APPLICATIONS PowerPAK SO-8 VRM, POL, Server High C... See More ⇒

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SIR474DP

New Product SiR470DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Gen III Power MOSFET RoHS 0.0023 at VGS = 10 V 60 COMPLIANT 40 45.5 nC 100 % Rg Tested 0.00265 at VGS = 4.5 V 60 100 % UIS Tested APPLICATIONS PowerPAK SO-8 Secondary Side Synchronous Rectifi... See More ⇒

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Detailed specifications: SIR460DP, SIR462DP, SIR464DP, SIR466DP, SIR468DP, SIR470DP, SIR472ADP, SIR472DP, 4435, SIR476DP, SIR484DP, SIR492DP, SIR494DP, SIR496DP, SIR640ADP, SIR640DP, SIR642DP

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.