SIR642DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIR642DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 35.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 56 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 3125 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: SO-8
SIR642DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIR642DP Datasheet (PDF)
sir642dp.pdf
New ProductSiR642DPVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) Low Qg for High Efficiency0.0024 at VGS = 10 V 60 100 % Rg and UIS Tested40 27.2 nC0.0030 at VGS = 4.5 V 60 Material categorization:For definitions of compliance please see www.vishay.com/doc?99912
sir640adp.pdf
SiR640ADPwww.vishay.comVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) Low Qg for high efficiency0.0020 at VGS = 10 V 10040 28.5 nC 100 % Rg and UIS tested0.0025 at VGS = 4.5 V 100 Material categorization: PowerPAK SO-8 Singlefor definitions of compliance please se
sir640dp.pdf
New ProductSiR640DPVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0017 at VGS = 10 V 60 TrenchFET Power MOSFET40 34.6 nC0.0022 at VGS = 4.5 V 60 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8 Low Qg for High Efficiency Compli
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: DMC3032LSD
History: DMC3032LSD
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