SIR800DP PDF and Equivalents Search

 

SIR800DP Specs and Replacement


   Type Designator: SIR800DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 5.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 35.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: SO-8
 

 SIR800DP substitution

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SIR800DP datasheet

 ..1. Size:341K  vishay
sir800dp.pdf pdf_icon

SIR800DP

New Product SiR800DP Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0023 at VGS = 10 V 50 TrenchFET Gen III Power MOSFET 0.0026 at VGS = 4.5 V 20 50 41 nC 100 % Rg Tested 0.0034 at VGS = 2.5 V 50 100 % UIS Tested Compliant to RoHS... See More ⇒

 9.1. Size:509K  vishay
sir802dp.pdf pdf_icon

SIR800DP

New Product SiR802DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.005 at VGS = 10 V 30 TrenchFET Gen III Power MOSFET 0.0057 at VGS = 4.5 V 20 30 15.5 nC 100 % Rg Tested 0.0076 at VGS = 2.5 V 30 100 % UIS Tested Compliant to RoH... See More ⇒

 9.2. Size:500K  vishay
sir804dp.pdf pdf_icon

SIR800DP

New Product SiR804DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0072 at VGS = 10 V 60 TrenchFET Power MOSFET 0.0078 at VGS = 7.5 V 100 60 24.8 nC 100 % Rg Tested 0.0103 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Di... See More ⇒

 9.3. Size:477K  vishay
sir808dp.pdf pdf_icon

SIR800DP

SiR808DP Vishay Siliconix N-Channel 25 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.0089 at VGS = 10 V 20 TrenchFET Power MOSFET 25 7.5 nC 0.0119 at VGS = 4.5 V Low Thermal Resistance PowerPAK 20 Package with Low 1.07 mm Profile Optimized for High-Side Synchron... See More ⇒

Detailed specifications: SIR640DP , SIR642DP , SIR662DP , SIR698DP , SIR770DP , SIR774DP , SIR788DP , SIR798DP , STP80NF70 , SIR802DP , SIR804DP , SIR808DP , SIR812DP , SIR818DP , SIR820DP , SIR826ADP , SIR826DP .

History: JMSL10380P | JMSL0615AV

Keywords - SIR800DP MOSFET specs

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