SIR826ADP Datasheet and Replacement
Type Designator: SIR826ADP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: SO-8
SIR826ADP substitution
SIR826ADP Datasheet (PDF)
sir826adp.pdf

New ProductSiR826ADPVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0055 at VGS = 10 V Material categorization:60For definitions of compliance please see0.0059 at VGS = 7.5 V 80 60 25 nCwww.vishay.com/doc?999120.0087 at VGS = 4.5 V 60AP
sir826dp.pdf

New ProductSiR826DPVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0048 at VGS = 10 V 60 TrenchFET Power MOSFET0.0052 at VGS = 7.5 V 80 60 27.9 nC 100 % Rg Tested0.0065 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Dire
sir820dp.pdf

New ProductSiR820DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.0030 at VGS = 10 V 40g30 28.6 nC 100 % Rg and UIS Tested0.0038 at VGS = 4.5 V 40g Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK SO-8
Datasheet: SIR798DP , SIR800DP , SIR802DP , SIR804DP , SIR808DP , SIR812DP , SIR818DP , SIR820DP , P0903BDG , SIR826DP , SIR836DP , SIR838DP , SIR844DP , SIR846ADP , SIR846DP , SIR850DP , SIR862DP .
History: STM4806
Keywords - SIR826ADP MOSFET datasheet
SIR826ADP cross reference
SIR826ADP equivalent finder
SIR826ADP lookup
SIR826ADP substitution
SIR826ADP replacement
History: STM4806



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