All MOSFET. SIR846ADP Datasheet

 

SIR846ADP Datasheet and Replacement


   Type Designator: SIR846ADP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: SO-8
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SIR846ADP Datasheet (PDF)

 ..1. Size:176K  vishay
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SIR846ADP

SiR846ADPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0078 at VGS = 10 V 60 Material categorization:0.0085 at VGS = 7.5 V For definitions of compliance please see100 60 26.7 nCwww.vishay.com/doc?999120.0095 at VGS = 6 V 60APPLICATIONS

 8.1. Size:92K  vishay
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SIR846ADP

New ProductSiR846DPVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition 0.0078 at VGS = 10 V 60 TrenchFET Power MOSFET100 35.7 nC0.0085 at VGS = 7.5 V 60 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK

 9.1. Size:121K  vishay
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SIR846ADP

New ProductSiR844DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0028 at VGS = 10 V 50a, g TrenchFET Power MOSFET25 29.5 nC0.0038 at VGS = 4.5 V New MOSFET Technology Optimized for 50a, gRinging Reduction in Switching ApplicationsPowerPAK

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SM6A25NSUB | HLML6401 | FMP11N60E | C2M1000170J | SSF1006H | IXTA200N085T7 | AP85T03GH-HF

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