SIR876ADP
MOSFET. Datasheet pdf. Equivalent
Type Designator: SIR876ADP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8
V
|Id|ⓘ - Maximum Drain Current: 15.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32.8
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 710
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0108
Ohm
Package:
SO-8
SIR876ADP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIR876ADP
Datasheet (PDF)
..1. Size:504K vishay
sir876adp.pdf 
New ProductSiR876ADPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.0108 at VGS = 10 V 40 100 % Rg and UIS Tested0.0114 at VGS = 7.5 V 100 40 16.3 nC Compliant to RoHS Directive 2002/95/EC0.0145 at VGS = 4.
8.1. Size:507K vishay
sir876dp.pdf
New ProductSiR876DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0108 at VGS = 10 V 40 TrenchFET Power MOSFET 100 % Rg Tested0.0114 at VGS = 7.5 V 100 40 16.9 nC 100 % UIS Tested0.0145 at VGS = 4.5 V 40 Compliant to RoHS Dire
9.1. Size:516K vishay
sir878adp.pdf
New ProductSiR878ADPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.014 at VGS = 10 V 40 100 % Rg and UIS Tested0.0148 at VGS = 7.5 V 100 38 13.9 nC Compliant to RoHS Directive 2002/95/EC0.018 at VGS = 4.5
9.2. Size:392K vishay
sir871dp.pdf
SiR871DPwww.vishay.comVishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD ThunderFET power MOSFETD 8 Low RDS(on) and thermally enhanced packageD 7D 6increase power density5 100 % Rg and UIS tested Material categorization: for definitions of complianceplease see www.vishay.com/doc?9991212 SS3 S APPLICATIONS4 S1
9.3. Size:182K vishay
sir878dp.pdf
New ProductSiR878DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.014 at VGS = 10 V 40 TrenchFET Power MOSFET 100 % Rg Tested0.0148 at VGS = 7.5 V 100 38 13.6 nC 100 % UIS Tested0.019 at VGS = 4.5 V 34 Compliant to RoHS Dire
9.4. Size:185K vishay
sir870dp.pdf
New ProductSiR870DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0060 at VGS = 10 V Material categorization:60For definitions of compliance please see0.0064 at VGS = 7.5 V 100 60 26.7 nCwww.vishay.com/doc?999120.0078 at VGS = 4.5 V 60APPL
9.5. Size:503K vishay
sir872dp.pdf
SiR872DPVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. Qg (Typ.)ID (A) 100 % Rg and UIS Tested0.0180 at VGS = 10 V 53.7 Material categorization:150 31.5 nC0.0200 at VGS = 7.5 V For definitions of compliance please see51www.vishay.com/doc?99912PowerPAK SO-8APPLICATIONS F
9.6. Size:190K vishay
sir873dp.pdf
SiR873DPwww.vishay.comVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET power MOSFETD 8D 7 Very low RDS(ON) minimizes power loss D 6from conduction5 100 % Rg and UIS tested Material categorization: 1for definitions of compliance please see 2 Swww.vishay.com/doc?999123 S4 S1GAPPLICATIONS STop View
9.7. Size:476K vishay
sir870adp.pdf
New ProductSiR870ADPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Definition0.0066 at VGS = 10 V 60 TrenchFET Power MOSFET0.0070 at VGS = 7.5 V 100 % Rg and UIS Tested100 60 25.5 nC Compliant to RoHS Directive 2002/95/EC0.0105 at VGS = 4.5
9.8. Size:643K vishay
sir874dp.pdf
New ProductSiR874DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0094 at VGS = 10 V 20 TrenchFET Gen III Power MOSFET25 8 nC0.012 at VGS = 4.5 V 20 Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile Optimized for Hi
9.9. Size:309K vishay
sir872adp.pdf
SiR872ADPVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)g Qg (Typ.) 100 % Rg and UIS Tested0.0180 at VGS = 10 V 53.7 Material categorization:150 22.8 nC0.0230 at VGS = 7.5 V For definitions of compliance please see45www.vishay.com/doc?99912PowerPAK SO-8APPLICATIONS
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