RF1K49090 Specs and Replacement

Type Designator: RF1K49090

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: MS012AA

RF1K49090 substitution

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RF1K49090 datasheet

 ..1. Size:248K  fairchild semi
 rf1k49090.pdf pdf_icon

RF1K49090

RF1K49090 Data Sheet January 2002 3.5A, 12V, 0.050 Ohm, Logic Level, Dual Features N-Channel LittleFET Power MOSFET 3.5A, 12V This Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.050 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, gives optimum u... See More ⇒

 6.1. Size:247K  intersil
 rf1k49092.pdf pdf_icon

RF1K49090

RF1K49092 Data Sheet August 1999 File Number 3968.5 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Features Level, Complementary LittleFET Power 3.5A, 12V (N-Channel) MOSFET 2.5A, 12V (P-Channel) This complementary power MOSFET is manufactured using rDS(ON) = 0.050 (N-Channel) an advanced MegaFET process. This process, which uses rDS(ON) = 0.130 (P-Channel) feature sizes app... See More ⇒

 6.2. Size:141K  intersil
 rf1k49093.pdf pdf_icon

RF1K49090

RF1K49093 Data Sheet August 1999 File Number 3969.5 2.5A, 12V, 0.130 Ohm, Logic Level, Dual Features P-Channel LittleFET Power MOSFET 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using rDS(ON) = 0.130 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, ... See More ⇒

 7.1. Size:232K  fairchild semi
 rf1k49088.pdf pdf_icon

RF1K49090

RF1K49088 Data Sheet January 2002 3.5A, 30V, 0.06 Ohm, Logic Level, Dual Features N-Channel LittleFET Power MOSFET 3.5A, 30V This Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, gives optimum ut... See More ⇒

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Detailed specifications: PN4391, PN4392, PN4393, PN4416, PN4416A, PSMN003-25W, RF1K49086, RF1K49088, IRFB3607, RF1K49092, RF1K49093, RF1K49154, RF1K49156, RF1K49157, RF1K49211, RF1K49221, RF1K49223

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.