All MOSFET. SIR880DP Datasheet

 

SIR880DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIR880DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1525 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: SO-8

 SIR880DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIR880DP Datasheet (PDF)

 ..1. Size:499K  vishay
 sir880dp.pdf

SIR880DP SIR880DP

New ProductSiR880DPVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0059 at VGS = 10 V 60 TrenchFET Power MOSFET0.0067 at VGS = 7.5 V 80 60 23 nC 100 % Rg Tested0.0085 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Direct

 8.1. Size:510K  vishay
 sir880adp.pdf

SIR880DP SIR880DP

New Product SiR880ADPVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0063 at VGS = 10 V 60 Material categorization:0.0068 at VGS = 7.5 V For definitions of compliance please see80 60 24 nCwww.vishay.com/doc?999120.0089 at VGS = 4.5 V 60

 9.1. Size:507K  vishay
 sir888dp.pdf

SIR880DP SIR880DP

New ProductSiR888DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.00325 at VGS = 10 V 40g 100 % Rg TestedCOMPLIANT 25 35.5 nC0.0040 at VGS = 4.5 V 40g 100 % Avalanche TestedAPPLICATIONSPowerPAK SO-8 Low-Side Switch in Synchronous Buck

 9.2. Size:184K  vishay
 sir882dp.pdf

SIR880DP SIR880DP

New ProductSiR882DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0087 at VGS = 10 V 60 TrenchFET Power MOSFET 100 % Rg Tested0.0094 at VGS = 7.5 V 100 60 18.3 nC 100 % UIS Tested0.0115 at VGS = 4.5 V 60 Compliant to RoHS Di

 9.3. Size:506K  vishay
 sir882adp.pdf

SIR880DP SIR880DP

New ProductSiR882ADPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Definition0.0087 at VGS = 10 V TrenchFET Power MOSFET600.0094 at VGS = 7.5 V 100 % Rg and UIS Tested100 60 19.5 nC0.0115 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC60

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: DMG4406LSS

 

 
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