All MOSFET. SIRA04DP Datasheet

 

SIRA04DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIRA04DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 35.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 51 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1040 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00215 Ohm
   Package: SO-8

 SIRA04DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIRA04DP Datasheet (PDF)

 ..1. Size:508K  vishay
 sira04dp.pdf

SIRA04DP SIRA04DP

New ProductSiRA04DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.00215 at VGS = 10 V Material categorization:4030 22.5 nCFor definitions of compliance please see0.00310 at VGS = 4.5 V 40www.vishay.com/doc?99912APPLICATIONS

 9.1. Size:172K  vishay
 sira00dp.pdf

SIRA04DP SIRA04DP

SiRA00DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.00100 at VGS = 10 V Material categorization:10030 66 nCFor definitions of compliance please see0.00135 at VGS = 4.5 V 100www.vishay.com/doc?99912PowerPAK SO-8APPLICATIO

 9.2. Size:180K  vishay
 sira01dp.pdf

SIRA04DP SIRA04DP

SiRA01DPwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV p-channel power MOSFETD 8 Very low Qgd miller charge and Qgd/Qgs ratio

 9.3. Size:159K  vishay
 sira02dp.pdf

SIRA04DP SIRA04DP

New ProductSiRA02DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.00200 at VGS = 10 V Material categorization:5030 34.3 nCFor definitions of compliance please see0.00270 at VGS = 4.5 V 50www.vishay.com/doc?99912APPLICATIONS

 9.4. Size:187K  vishay
 sira06dp.pdf

SIRA04DP SIRA04DP

New ProductSiRA06DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.0025 at VGS = 10 V Material categorization:4030 22.5 nCFor definitions of compliance please see0.0035 at VGS = 4.5 V 40www.vishay.com/doc?99912APPLICATIONSPo

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: ME85P03-G | 2SJ134 | IPD30N06S2L-23

 

 
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