SIRA12DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIRA12DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29.5 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
Package: SO-8
SIRA12DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIRA12DP Datasheet (PDF)
sira12dp.pdf
New ProductSiRA12DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.)Definition TrenchFET Gen IV Power MOSFET0.0043 at VGS = 10 V 2530 13.6 nC 100 % Rg and UIS Tested0.0060 at VGS = 4.5 V 25 Compliant to RoHS Directive 2002/95/ECAPPLICAT
sira12bdp.pdf
SiRA12BDPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 100 % Rg and UIS testedD 65 Material categorization:for definitions of compliance please see www.vishay.com/doc?9991212 SAPPLICATIONSD3 S4 S1 High power density DC/DCGTop View Bottom View Syn
sira14bdp.pdf
SiRA14BDPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 100 % Rg and UIS testedD 65 Material categorization:for definitions of compliance please see www.vishay.com/doc?9991212 SDAPPLICATIONS3 S4 S1 High power density DC/DCGTop View Bottom View Syn
sira14dp.pdf
New ProductSiRA14DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () Max.ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.00510 at VGS = 10 V Material categorization:2030 9.4 nCFor definitions of compliance please see0.00850 at VGS = 4.5 V 20www.vishay.com/doc?99912PowerPAK SO-8
sira10bdp.pdf
SiRA10BDPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 100 % Rg and UIS testedD 65 Material categorization:for definitions of compliance please see www.vishay.com/doc?9991212 SAPPLICATIONSD3 S4 S1 High power density DC/DCGTop View Bottom View Syn
sira10dp.pdf
New ProductSiRA10DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.0037 at VGS = 10 V 30g Material categorization:30 15.4 nCFor definitions of compliance please see0.0050 at VGS = 4.5 V 30gwww.vishay.com/doc?99912APPLICATIONS
sira18adp.pdf
SiRA18ADPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested0.0087 at VGS = 10 V 30.630 6.9 nC Material categorization:0.0135 at VGS = 4.5 V 24.5for definitions of compliance please see PowerPAK SO-8 Singlewww.vishay.com/do
sira18dp.pdf
New ProductSiRA18DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0075 at VGS = 10 V Material categorization:3330 6.9 nCFor definitions of compliance please see0.0120 at VGS = 4.5 V 20.3www.vishay.com/doc?99912PowerPAK SO-8APP
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
