APT10035B2FLLG Specs and Replacement

Type Designator: APT10035B2FLLG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 690 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 881 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm

Package: TO-247

APT10035B2FLLG substitution

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APT10035B2FLLG datasheet

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APT10035B2FLLG

APT10035B2FLL(G) APT10035LFLL(G) 1000V 28A 0.37 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching ... See More ⇒

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APT10035B2FLLG

APT10035B2FLL APT10035LFLL 1000V 28A 0.350W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti... See More ⇒

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APT10035B2FLLG

APT10035B2LL APT10035LLL 1000V 28A 0.350 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses al... See More ⇒

 4.2. Size:69K  apt
 apt10035b2ll.pdf pdf_icon

APT10035B2FLLG

APT10035B2LL APT10035LLL 1000V 28A 0.350W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast ... See More ⇒

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Detailed specifications: APT1001R6BFLLG, APT1001R6SFLLG, APT1001RSVFR, APT1001RSVRG, APT10026L2FLLG, APT1002R4BNR, APT1002RBNR, APT10030L2VFRG, 20N60, APT10035B2LLG, APT10035LFLLG, APT10035LLLG, APT1003RBFLLG, APT1003RBLLG, APT1003RKFLLG, APT1003RKLLG, APT1003RSFLLG

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