All MOSFET. APT10035B2FLLG Datasheet

 

APT10035B2FLLG Datasheet and Replacement


   Type Designator: APT10035B2FLLG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 690 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 881 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
   Package: TO-247
 

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APT10035B2FLLG Datasheet (PDF)

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apt10035b2fllg apt10035lfllg.pdf pdf_icon

APT10035B2FLLG

APT10035B2FLL(G)APT10035LFLL(G)1000V 28A 0.37 RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching

 1.1. Size:63K  apt
apt10035b2fll.pdf pdf_icon

APT10035B2FLLG

APT10035B2FLLAPT10035LFLL1000V 28A 0.350WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with excepti

 4.1. Size:90K  apt
apt10035b2llg apt10035lllg.pdf pdf_icon

APT10035B2FLLG

APT10035B2LLAPT10035LLL1000V 28A 0.350RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesal

 4.2. Size:69K  apt
apt10035b2ll.pdf pdf_icon

APT10035B2FLLG

APT10035B2LLAPT10035LLL1000V 28A 0.350WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

Datasheet: APT1001R6BFLLG , APT1001R6SFLLG , APT1001RSVFR , APT1001RSVRG , APT10026L2FLLG , APT1002R4BNR , APT1002RBNR , APT10030L2VFRG , 20N60 , APT10035B2LLG , APT10035LFLLG , APT10035LLLG , APT1003RBFLLG , APT1003RBLLG , APT1003RKFLLG , APT1003RKLLG , APT1003RSFLLG .

History: MTDN8233X6 | WTK9410 | KTK5132E | IRFHM8337 | SI4916DY | SMF2N65 | SFS9630

Keywords - APT10035B2FLLG MOSFET datasheet

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