APT1003RBFLLG Specs and Replacement

Type Designator: APT1003RBFLLG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO-247

APT1003RBFLLG substitution

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APT1003RBFLLG datasheet

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 apt1003rbfllg apt1003rsfllg.pdf pdf_icon

APT1003RBFLLG

APT1003RBFLL APT1003RSFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with ... See More ⇒

 5.1. Size:99K  apt
 apt1003rbllg apt1003rsllg.pdf pdf_icon

APT1003RBFLLG

APT1003RBLL APT1003RSLL 1000V 4A 3.00 R POWER MOS 7 MOSFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exc... See More ⇒

 5.2. Size:99K  apt
 apt1003rbll.pdf pdf_icon

APT1003RBFLLG

APT1003RBLL APT1003RSLL 1000V 4A 3.00 R POWER MOS 7 MOSFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exc... See More ⇒

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 apt1003rkfllg.pdf pdf_icon

APT1003RBFLLG

APT1003RKFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses G D S along with exceptionall... See More ⇒

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Detailed specifications: APT10026L2FLLG, APT1002R4BNR, APT1002RBNR, APT10030L2VFRG, APT10035B2FLLG, APT10035B2LLG, APT10035LFLLG, APT10035LLLG, IRFP460, APT1003RBLLG, APT1003RKFLLG, APT1003RKLLG, APT1003RSFLLG, APT1003RSLLG, APT10040B2VFRG, APT10040LVFRG, APT10040LVR

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