APT10045LFLLG MOSFET. Datasheet pdf. Equivalent
Type Designator: APT10045LFLLG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 565 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 154 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 715 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
Package: TO-264
APT10045LFLLG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT10045LFLLG Datasheet (PDF)
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apt10045b2ll.pdf
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apt10045jfll.pdf
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apt10045b2fll.pdf
APT10045B2FLLAPT10045LFLL1000V 23A 0.450WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with excepti
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