RF1K49157 MOSFET. Datasheet pdf. Equivalent

   Type Designator: RF1K49157
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: MS012AA

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RF1K49157 Datasheet (PDF)

..1. Size:267K fairchild semi
rf1k49157.pdf pdf_icon

RF1K49157Data Sheet January 20026.3A, 30V, 0.030 Ohm, Single N-Channel FeaturesLittleFET Power MOSFET 6.3A, 30VThis Single N-Channel power MOSFET is manufactured rDS(ON) = 0.030using an advanced MegaFET process. This process, which Temperature Compensating PSPICE Modeluses feature sizes approaching those of LSI integrated circuits, gives optimum utilizati

6.1. Size:219K fairchild semi
rf1k49156.pdf pdf_icon

RF1K49156Data Sheet January 20026.3A, 30V, 0.030 Ohm, Logic Level, Single FeaturesN-Channel LittleFET Power MOSFET 6.3A, 30VThis Single N-Channel power MOSFET is manufactured rDS(ON) = 0.030using an advanced MegaFET process. This process, which Temperature Compensating PSPICE Modeluses feature sizes approaching those of LSI integrated circuits, gives optim

6.2. Size:285K fairchild semi
rf1k49154.pdf pdf_icon

RF1K49154Data Sheet January 20022A, 60V, 0.130 Ohm, Dual N-Channel, FeaturesLittleFET Power MOSFET 2A, 60VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.130the latest manufacturing process technology. This process, Temperature Compensating PSPICE Model which uses feature sizes approaching those of LSI integrated circuits, gives optimum

8.1. Size:232K fairchild semi
rf1k49223.pdf pdf_icon

RF1K49223Data Sheet January 20022.5A, 30V, 0.150 Ohm, Dual P-Channel FeaturesLittleFET Power MOSFET 2.5A, 30VThe RF1K49223 Dual P-Channel power MOSFET is rDS(ON) = 0.150manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Modelprocess, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utili

8.2. Size:248K fairchild semi
rf1k49090.pdf pdf_icon

RF1K49090Data Sheet January 20023.5A, 12V, 0.050 Ohm, Logic Level, Dual FeaturesN-Channel LittleFET Power MOSFET 3.5A, 12VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.050an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits, gives optimum u

8.3. Size:261K fairchild semi
rf1k49221.pdf pdf_icon

RF1K49221Data Sheet January 20022.5A, 60V, 0.130 Ohm, ESD Rated, Dual FeaturesN-Channel LittleFET Power MOSFET 2.5A, 60VThe RF1K49221 Dual N-Channel power MOSFET is rDS(ON) = 0.130manufactured using an advanced MegaFET process. This 2kV ESD Protectedprocess, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of s

8.4. Size:232K fairchild semi
rf1k49088.pdf pdf_icon

RF1K49088Data Sheet January 20023.5A, 30V, 0.06 Ohm, Logic Level, Dual FeaturesN-Channel LittleFET Power MOSFET 3.5A, 30VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits, gives optimum ut

8.5. Size:258K fairchild semi
rf1k49211.pdf pdf_icon

RF1K49211Data Sheet January 20027A, 12V, 0.020 Ohm, Logic Level, Single FeaturesN-Channel LittleFET Power MOSFET 7A, 12VThe RF1K49211 Single N-Channel power MOSFET is rDS(ON) = 0.020manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Modelprocess, which uses feature sizes approaching those of LSI integrated circuits, gives

8.6. Size:142K intersil
rf1k49086.pdf pdf_icon

RF1K49086Data Sheet August 1999 File Number 3986.53.5A, 30V, 0.06 Ohm, Dual N-Channel FeaturesLittleFET Power MOSFET 3.5A, 30VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,gives optimum

8.7. Size:247K intersil
rf1k49092.pdf pdf_icon

RF1K49092Data Sheet August 1999 File Number 3968.53.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic FeaturesLevel, Complementary LittleFET Power 3.5A, 12V (N-Channel)MOSFET2.5A, 12V (P-Channel)This complementary power MOSFET is manufactured using rDS(ON) = 0.050 (N-Channel)an advanced MegaFET process. This process, which usesrDS(ON) = 0.130 (P-Channel)feature sizes app

8.8. Size:141K intersil
rf1k49093.pdf pdf_icon

RF1K49093Data Sheet August 1999 File Number 3969.52.5A, 12V, 0.130 Ohm, Logic Level, Dual FeaturesP-Channel LittleFET Power MOSFET 2.5A, 12VThis Dual P-Channel power MOSFET is manufactured using rDS(ON) = 0.130an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,

8.9. Size:223K intersil
rf1k49224.pdf pdf_icon

RF1K49224Data Sheet August 1999 File Number 4330.13.5A/2.5A, 30V, 0.060/0.150 Ohms, FeaturesComplementary LittleFET Power 3.5A, 30V (N-Channel)MOSFET2.5A, 30V (P-Channel)The RF1K49224 complementary power MOSFET is rDS(ON) = 0.060 (N-Channel)manufactured using an advanced MegaFET process. ThisrDS(ON) = 0.150 (P-Channel)process, which uses feature sizes approa

Datasheet: PSMN003-25W , RF1K49086 , RF1K49088 , RF1K49090 , RF1K49092 , RF1K49093 , RF1K49154 , RF1K49156 , IRFZ24N , RF1K49211 , RF1K49221 , RF1K49223 , RF1K49224 , RF1S22N10SM , RF1S25N06SM , RF1S30N06LESM , RF1S30P05SM .

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RF1K49157 MOSFET. Datasheet pdf. Equivalent

RF1K49157 Datasheet (PDF)

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