RF1K49157 MOSFET. Datasheet pdf. Equivalent
Type Designator: RF1K49157
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 6.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: MS012AA
RF1K49157 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RF1K49157 Datasheet (PDF)
rf1k49157.pdf
RF1K49157Data Sheet January 20026.3A, 30V, 0.030 Ohm, Single N-Channel FeaturesLittleFET Power MOSFET 6.3A, 30VThis Single N-Channel power MOSFET is manufactured rDS(ON) = 0.030using an advanced MegaFET process. This process, which Temperature Compensating PSPICE Modeluses feature sizes approaching those of LSI integrated circuits, gives optimum utilizati
rf1k49156.pdf
RF1K49156Data Sheet January 20026.3A, 30V, 0.030 Ohm, Logic Level, Single FeaturesN-Channel LittleFET Power MOSFET 6.3A, 30VThis Single N-Channel power MOSFET is manufactured rDS(ON) = 0.030using an advanced MegaFET process. This process, which Temperature Compensating PSPICE Modeluses feature sizes approaching those of LSI integrated circuits, gives optim
rf1k49154.pdf
RF1K49154Data Sheet January 20022A, 60V, 0.130 Ohm, Dual N-Channel, FeaturesLittleFET Power MOSFET 2A, 60VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.130the latest manufacturing process technology. This process, Temperature Compensating PSPICE Model which uses feature sizes approaching those of LSI integrated circuits, gives optimum
rf1k49223.pdf
RF1K49223Data Sheet January 20022.5A, 30V, 0.150 Ohm, Dual P-Channel FeaturesLittleFET Power MOSFET 2.5A, 30VThe RF1K49223 Dual P-Channel power MOSFET is rDS(ON) = 0.150manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Modelprocess, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utili
rf1k49090.pdf
RF1K49090Data Sheet January 20023.5A, 12V, 0.050 Ohm, Logic Level, Dual FeaturesN-Channel LittleFET Power MOSFET 3.5A, 12VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.050an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits, gives optimum u
rf1k49221.pdf
RF1K49221Data Sheet January 20022.5A, 60V, 0.130 Ohm, ESD Rated, Dual FeaturesN-Channel LittleFET Power MOSFET 2.5A, 60VThe RF1K49221 Dual N-Channel power MOSFET is rDS(ON) = 0.130manufactured using an advanced MegaFET process. This 2kV ESD Protectedprocess, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of s
rf1k49088.pdf
RF1K49088Data Sheet January 20023.5A, 30V, 0.06 Ohm, Logic Level, Dual FeaturesN-Channel LittleFET Power MOSFET 3.5A, 30VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits, gives optimum ut
rf1k49211.pdf
RF1K49211Data Sheet January 20027A, 12V, 0.020 Ohm, Logic Level, Single FeaturesN-Channel LittleFET Power MOSFET 7A, 12VThe RF1K49211 Single N-Channel power MOSFET is rDS(ON) = 0.020manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Modelprocess, which uses feature sizes approaching those of LSI integrated circuits, gives
rf1k49086.pdf
RF1K49086Data Sheet August 1999 File Number 3986.53.5A, 30V, 0.06 Ohm, Dual N-Channel FeaturesLittleFET Power MOSFET 3.5A, 30VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,gives optimum
rf1k49092.pdf
RF1K49092Data Sheet August 1999 File Number 3968.53.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic FeaturesLevel, Complementary LittleFET Power 3.5A, 12V (N-Channel)MOSFET2.5A, 12V (P-Channel)This complementary power MOSFET is manufactured using rDS(ON) = 0.050 (N-Channel)an advanced MegaFET process. This process, which usesrDS(ON) = 0.130 (P-Channel)feature sizes app
rf1k49093.pdf
RF1K49093Data Sheet August 1999 File Number 3969.52.5A, 12V, 0.130 Ohm, Logic Level, Dual FeaturesP-Channel LittleFET Power MOSFET 2.5A, 12VThis Dual P-Channel power MOSFET is manufactured using rDS(ON) = 0.130an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,
rf1k49224.pdf
RF1K49224Data Sheet August 1999 File Number 4330.13.5A/2.5A, 30V, 0.060/0.150 Ohms, FeaturesComplementary LittleFET Power 3.5A, 30V (N-Channel)MOSFET2.5A, 30V (P-Channel)The RF1K49224 complementary power MOSFET is rDS(ON) = 0.060 (N-Channel)manufactured using an advanced MegaFET process. ThisrDS(ON) = 0.150 (P-Channel)process, which uses feature sizes approa
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
