All MOSFET. APT10M11JVFR Datasheet

 

APT10M11JVFR Datasheet and Replacement


   Type Designator: APT10M11JVFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 144 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 3200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOT-227
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APT10M11JVFR Datasheet (PDF)

 ..1. Size:118K  apt
 apt10m11jvfr.pdf pdf_icon

APT10M11JVFR

APT10M11JVFR100V 144A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switchi

 4.1. Size:70K  apt
 apt10m11jvr.pdf pdf_icon

APT10M11JVFR

APT10M11JVR100V 144A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 6.1. Size:63K  apt
 apt10m11b2vr.pdf pdf_icon

APT10M11JVFR

APT10M11B2VR100V 100A 0.011POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

 6.2. Size:64K  apt
 apt10m11b2vfrg apt10m11lvfrg.pdf pdf_icon

APT10M11JVFR

APT10M11B2VFRAPT10M11LVFR100V 100A 0.011WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

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History: STSJ100NHS3LL | CED05N8 | MC08N005C | AON6794 | STT6602 | IRLR024 | BL10N70-A

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