APT10M11JVFR Specs and Replacement

Type Designator: APT10M11JVFR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 450 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 144 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 3200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: SOT-227

APT10M11JVFR substitution

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APT10M11JVFR datasheet

 ..1. Size:118K  apt
 apt10m11jvfr.pdf pdf_icon

APT10M11JVFR

APT10M11JVFR 100V 144A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switchi... See More ⇒

 4.1. Size:70K  apt
 apt10m11jvr.pdf pdf_icon

APT10M11JVFR

APT10M11JVR 100V 144A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche... See More ⇒

 6.1. Size:63K  apt
 apt10m11b2vr.pdf pdf_icon

APT10M11JVFR

APT10M11B2VR 100V 100A 0.011 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L... See More ⇒

 6.2. Size:64K  apt
 apt10m11b2vfrg apt10m11lvfrg.pdf pdf_icon

APT10M11JVFR

APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical... See More ⇒

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Detailed specifications: APT10090SFLLG, APT10090SLLG, APT100F50J, APT100M50J, APT106N60B2C6, APT10M07JVFR, APT10M09LVFRG, APT10M11B2VFRG, IRFP260, APT10M11LVFRG, APT10M19BVFRG, APT10M19BVRG, APT10M19SVFR, APT10M19SVFRG, APT11F80B, APT11F80S, APT11N80BC3G

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