APT10M19BVRG Specs and Replacement

Type Designator: APT10M19BVRG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 370 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 1900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: TO-247

APT10M19BVRG substitution

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APT10M19BVRG datasheet

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APT10M19BVRG

APT10M19BVR 100V 75A 0.019 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower ... See More ⇒

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 apt10m19bvr.pdf pdf_icon

APT10M19BVRG

APT10M19BVR 100V 75A 0.019 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower ... See More ⇒

 3.2. Size:376K  inchange semiconductor
 apt10m19bvr.pdf pdf_icon

APT10M19BVRG

isc N-Channel MOSFET Transistor APT10M19BVR FEATURES Drain Current I =75A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =0.019 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

 4.1. Size:74K  apt
 apt10m19bvfr.pdf pdf_icon

APT10M19BVRG

APT10M19BVFR 100V 75A 0.019 POWER MOS V FREDFET TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avala... See More ⇒

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Detailed specifications: APT100M50J, APT106N60B2C6, APT10M07JVFR, APT10M09LVFRG, APT10M11B2VFRG, APT10M11JVFR, APT10M11LVFRG, APT10M19BVFRG, SKD502T, APT10M19SVFR, APT10M19SVFRG, APT11F80B, APT11F80S, APT11N80BC3G, APT11N80KC3G, APT1201R2BFLLG, APT1201R2SFLLG

Keywords - APT10M19BVRG MOSFET specs

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