APT1201R2BFLLG PDF and Equivalents Search

 ..1. Size:159K  apt
 apt1201r2bfllg apt1201r2sfllg.pdf

APT1201R2BFLL(G) APT1201R2SFLL(G) 1200V 12A 1.25 R BFLL POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching loss... See More ⇒

 4.1. Size:69K  apt
 apt1201r2bll.pdf

APT1201R2BLL APT1201R2SLL 1200V 12A 1.200W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switc... See More ⇒

 5.1. Size:65K  apt
 apt1201r2sll.pdf

APT1201R2BLL APT1201R2SLL 1200V 12A 1.200W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switc... See More ⇒

 6.1. Size:144K  apt
 apt1201r5bvfrg apt1201r5svfrg.pdf

APT1201R5BVFR APT1201R5SVFR 1200V 10A 1.500 POWER MOS V TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switchi... See More ⇒

 6.2. Size:137K  apt
 apt1201r5bvfr.pdf

APT1201R5BVFR APT1201R5SVFR 1200V 10A 1.500 POWER MOS V TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switchi... See More ⇒

 6.3. Size:62K  apt
 apt1201r6bvr.pdf

APT1201R6BVR 1200V 8A 1.600 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower... See More ⇒

 6.4. Size:69K  apt
 apt1201r4bll.pdf

APT1201R4BLL APT1201R4SLL 1200V 9A 1.400W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switch... See More ⇒

 6.5. Size:113K  apt
 apt1201r6bvfr.pdf

APT1201R6BVFR APT1201R6SVFR 1200V 8A 1.600 BVFR POWER MOS V FREDFET TO-247 D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ... See More ⇒

 6.6. Size:114K  apt
 apt1201r6bvfrg apt1201r6svfrg.pdf

APT1201R6BVFR APT1201R6SVFR 1200V 8A 1.600 BVFR POWER MOS V FREDFET TO-247 D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ... See More ⇒

 6.7. Size:254K  apt
 apt1201r4bfll apt1201r4sfll.pdf

APT1201R4BFLL(G) APT1201R4SFLL(G) 1200V 9A 1.50 R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses al... See More ⇒

 6.8. Size:62K  apt
 apt1201r6.pdf

APT1201R6BVR 1200V 8A 1.600 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower... See More ⇒

 6.9. Size:63K  apt
 apt1201r5bvr.pdf

APT1201R5BVR 1200V 10A 1.500 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe... See More ⇒