RF1K49223 Specs and Replacement

Type Designator: RF1K49223

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: MS012AA

RF1K49223 substitution

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RF1K49223 datasheet

 ..1. Size:232K  fairchild semi
 rf1k49223.pdf pdf_icon

RF1K49223

RF1K49223 Data Sheet January 2002 2.5A, 30V, 0.150 Ohm, Dual P-Channel Features LittleFET Power MOSFET 2.5A, 30V The RF1K49223 Dual P-Channel power MOSFET is rDS(ON) = 0.150 manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Model process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utili... See More ⇒

 6.1. Size:261K  fairchild semi
 rf1k49221.pdf pdf_icon

RF1K49223

RF1K49221 Data Sheet January 2002 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual Features N-Channel LittleFET Power MOSFET 2.5A, 60V The RF1K49221 Dual N-Channel power MOSFET is rDS(ON) = 0.130 manufactured using an advanced MegaFET process. This 2kV ESD Protected process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of s... See More ⇒

 6.2. Size:223K  intersil
 rf1k49224.pdf pdf_icon

RF1K49223

RF1K49224 Data Sheet August 1999 File Number 4330.1 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Features Complementary LittleFET Power 3.5A, 30V (N-Channel) MOSFET 2.5A, 30V (P-Channel) The RF1K49224 complementary power MOSFET is rDS(ON) = 0.060 (N-Channel) manufactured using an advanced MegaFET process. This rDS(ON) = 0.150 (P-Channel) process, which uses feature sizes approa... See More ⇒

 7.1. Size:258K  fairchild semi
 rf1k49211.pdf pdf_icon

RF1K49223

RF1K49211 Data Sheet January 2002 7A, 12V, 0.020 Ohm, Logic Level, Single Features N-Channel LittleFET Power MOSFET 7A, 12V The RF1K49211 Single N-Channel power MOSFET is rDS(ON) = 0.020 manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Model process, which uses feature sizes approaching those of LSI integrated circuits, gives ... See More ⇒

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Detailed specifications: RF1K49090, RF1K49092, RF1K49093, RF1K49154, RF1K49156, RF1K49157, RF1K49211, RF1K49221, TK10A60D, RF1K49224, RF1S22N10SM, RF1S25N06SM, RF1S30N06LESM, RF1S30P05SM, RF1S30P06SM, RF1S40N10LESM, RF1S40N10SM

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.