All MOSFET. RF1K49223 Datasheet

 

RF1K49223 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RF1K49223
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: MS012AA

 RF1K49223 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RF1K49223 Datasheet (PDF)

 ..1. Size:232K  fairchild semi
 rf1k49223.pdf

RF1K49223 RF1K49223

RF1K49223Data Sheet January 20022.5A, 30V, 0.150 Ohm, Dual P-Channel FeaturesLittleFET Power MOSFET 2.5A, 30VThe RF1K49223 Dual P-Channel power MOSFET is rDS(ON) = 0.150manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Modelprocess, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utili

 6.1. Size:261K  fairchild semi
 rf1k49221.pdf

RF1K49223 RF1K49223

RF1K49221Data Sheet January 20022.5A, 60V, 0.130 Ohm, ESD Rated, Dual FeaturesN-Channel LittleFET Power MOSFET 2.5A, 60VThe RF1K49221 Dual N-Channel power MOSFET is rDS(ON) = 0.130manufactured using an advanced MegaFET process. This 2kV ESD Protectedprocess, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of s

 6.2. Size:223K  intersil
 rf1k49224.pdf

RF1K49223 RF1K49223

RF1K49224Data Sheet August 1999 File Number 4330.13.5A/2.5A, 30V, 0.060/0.150 Ohms, FeaturesComplementary LittleFET Power 3.5A, 30V (N-Channel)MOSFET2.5A, 30V (P-Channel)The RF1K49224 complementary power MOSFET is rDS(ON) = 0.060 (N-Channel)manufactured using an advanced MegaFET process. ThisrDS(ON) = 0.150 (P-Channel)process, which uses feature sizes approa

 7.1. Size:258K  fairchild semi
 rf1k49211.pdf

RF1K49223 RF1K49223

RF1K49211Data Sheet January 20027A, 12V, 0.020 Ohm, Logic Level, Single FeaturesN-Channel LittleFET Power MOSFET 7A, 12VThe RF1K49211 Single N-Channel power MOSFET is rDS(ON) = 0.020manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Modelprocess, which uses feature sizes approaching those of LSI integrated circuits, gives

Datasheet: RF1K49090 , RF1K49092 , RF1K49093 , RF1K49154 , RF1K49156 , RF1K49157 , RF1K49211 , RF1K49221 , HY1906P , RF1K49224 , RF1S22N10SM , RF1S25N06SM , RF1S30N06LESM , RF1S30P05SM , RF1S30P06SM , RF1S40N10LESM , RF1S40N10SM .

 

 
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