APT12057B2FLLG
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT12057B2FLLG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 690
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 22
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 185
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 770
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.57
Ohm
Package:
TO-247
APT12057B2FLLG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT12057B2FLLG
Datasheet (PDF)
..1. Size:165K apt
apt12057b2fllg apt12057lfllg.pdf 
APT12057B2FLLAPT12057LFLL1200V 22A 0.570RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses
4.1. Size:69K apt
apt12057b2llg apt12057lllg.pdf
APT12057B2LLAPT12057LLL1200V 22A 0.570RB2LL POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalo
4.2. Size:69K apt
apt12057b2ll.pdf
APT12057B2LLAPT12057LLL1200V 22A 0.570WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast
6.1. Size:69K apt
apt12057jll.pdf
APT12057JLL1200V 19A 0.570WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's
6.2. Size:166K apt
apt12057jfll.pdf
APT12057JFLL1200V 19A 0.570R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switchin
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