RF1S30P05SM Specs and Replacement

Type Designator: RF1S30P05SM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO263AB

RF1S30P05SM substitution

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RF1S30P05SM datasheet

 ..1. Size:365K  fairchild semi
 rfg30p05 rfp30p05 rf1s30p05sm.pdf pdf_icon

RF1S30P05SM

RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 50V These are P-Channel power MOSFETs manufactured rDS(ON) = 0.065 using the MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin... See More ⇒

 6.1. Size:386K  fairchild semi
 rfg30p06 rfp30p06 rf1s30p06sm.pdf pdf_icon

RF1S30P05SM

RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.065 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin... See More ⇒

 6.2. Size:44K  harris semi
 rf1s30p06.pdf pdf_icon

RF1S30P05SM

RFG30P06, RFP30P06, S E M I C O N D U C T O R RF1S30P06, RF1S30P06SM 30A, 60V, Avalanche Rated, P-Channel March 1995 Enhancement-Mode Power MOSFETs Features Packages JEDEC STYLE TO-247 30A, 60V SOURCE rDS(ON) = 0.065 DRAIN GATE Temperature Compensating PSPICE Model DRAIN Peak Current vs Pulse WIdth Curve (BOTTOM SIDE METAL) UIS Rating Curve +175oC Op... See More ⇒

 8.1. Size:188K  fairchild semi
 rfp30n06le rf1s30n06lesm.pdf pdf_icon

RF1S30P05SM

RFP30N06LE, RF1S30N06LESM Data Sheet January 2004 30A, 60V, ESD Rated, 0.047 Ohm, Logic Features Level N-Channel Power MOSFETs 30A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature 2kV ESD Protected sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, res... See More ⇒

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Detailed specifications: RF1K49157, RF1K49211, RF1K49221, RF1K49223, RF1K49224, RF1S22N10SM, RF1S25N06SM, RF1S30N06LESM, IRF1407, RF1S30P06SM, RF1S40N10LESM, RF1S40N10SM, RF1S45N06LESM, RF1S45N06SM, RF1S4N100SM, RF1S50N06LESM, RF1S50N06SM

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