APT23F60B MOSFET. Datasheet pdf. Equivalent
Type Designator: APT23F60B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 415 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 110 nC
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 405 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO-247
APT23F60B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT23F60B Datasheet (PDF)
apt23f60b apt23f60s.pdf
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APT23F60B APT23F60S 600V, 24A, 0.29 Max, trr 220nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
apt23f60b.pdf
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isc N-Channel MOSFET Transistor APT23F60BFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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