APT26F120L Specs and Replacement

Type Designator: APT26F120L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 715 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO-264

APT26F120L substitution

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APT26F120L datasheet

 ..1. Size:117K  microsemi
 apt26f120b2 apt26f120l.pdf pdf_icon

APT26F120L

APT26F120B2 APT26F120L 1200V, 27A, 0.58 Max, trr 335ns N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt ... See More ⇒

 9.1. Size:167K  apt
 apt26gu30k.pdf pdf_icon

APT26F120L

TYPICAL PERFORMANCE CURVES APT26GU30K_SA APT26GU30K APT26GU30SA 300V TO-220 POWER MOS 7 IGBT D2PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, C G C high voltage switching applications and has been optimized for high frequency E G E switchmode power supplies. Low Condu... See More ⇒

 9.2. Size:161K  apt
 apt26gu30b.pdf pdf_icon

APT26F120L

TYPICAL PERFORMANCE CURVES APT26GU30B APT26GU30B 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss SSOA rated C ... See More ⇒

 9.3. Size:107K  microsemi
 apt26m100jcu3.pdf pdf_icon

APT26F120L

APT26M100JCU3 VDSS = 1000V ISOTOP Buck chopper RDSon = 330m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 26A @ Tc = 25 C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G - Low RDSon S - Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott... See More ⇒

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Detailed specifications: APT24F50B, APT24F50S, APT24M120B2, APT24M120L, APT24M80B, APT24M80S, APT25M100J, APT26F120B2, AON7506, APT26M100JCU2, APT26M100JCU3, APT28F60B, APT28F60S, APT28M120B2, APT28M120L, APT29F100B2, APT29F100L

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