All MOSFET. APT28M120B2 Datasheet

 

APT28M120B2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT28M120B2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 29 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 300 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 715 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: TO-247

 APT28M120B2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT28M120B2 Datasheet (PDF)

 ..1. Size:207K  microsemi
 apt28m120b2 apt28m120l.pdf

APT28M120B2 APT28M120B2

APT28M120B2 APT28M120L 1200V, 29A, 0.53 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and

 9.1. Size:211K  microsemi
 apt28ga60k.pdf

APT28M120B2 APT28M120B2

APT28GA60K 600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO-220through leading technology silicon design and lifetime control processes. A reduced Eoff - APT28GA60KVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excelle

 9.2. Size:242K  microsemi
 apt28ga60bd15.pdf

APT28M120B2 APT28M120B2

APT28GA60BD15 600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT28GA60BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent

 9.3. Size:213K  microsemi
 apt28f60b apt28f60s.pdf

APT28M120B2 APT28M120B2

APT28F60B APT28F60S 600V, 30A, 0.22 Max, trr 230nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IRF4410A

 

 
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