RF1S4N100SM
MOSFET. Datasheet pdf. Equivalent
Type Designator: RF1S4N100SM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5
Ohm
Package:
TO263AB
RF1S4N100SM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RF1S4N100SM
Datasheet (PDF)
..1. Size:93K fairchild semi
rfp4n100 rf1s4n100sm.pdf 
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RFG45N06, RFP45N06, RF1S45N06SMData Sheet January 200245A, 60V, 0.028 Ohm, N-Channel Power FeaturesMOSFETs 45A, 60VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.028power field effect transistors. They are advanced power Temperature Compensating PSPICE ModelMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the
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RFG40N10, RFP40N10, RF1S40N10,RF1S40N10SMData Sheet January 200240A, 100V, 0.040 Ohm, N-Channel Power FeaturesMOSFETs 40A, 100VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040the MegaFET process. This process, which uses feature UIS Rating Curvesizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti
9.5. Size:410K intersil
rfg40n10le rfp40n10le rf1s40n10lesm.pdf
RFG40N10LE, RFP40N10LE, RF1S40N10LESMData Sheet October 1999 File Number 4061.540A, 100V, 0.040 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 40A, 100VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesappr
9.6. Size:202K intersil
rfp45n06le rf1s45n06lesm.pdf
RFP45N06LE, RF1S45N06LESMData Sheet October 1999 File Number 4076.245A, 60V, 0.028 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 45A, 60VThese are N-Channel enhancement mode power MOSFETs rDS(ON) = 0.028manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproaching those
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