APT30M85SVRG Specs and Replacement

Type Designator: APT30M85SVRG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 750 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: D3PAK

APT30M85SVRG substitution

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APT30M85SVRG datasheet

 ..1. Size:23K  apt
 apt30m85svrg.pdf pdf_icon

APT30M85SVRG

APT30M85SVR 300V 40A 0.085 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Lea... See More ⇒

 6.1. Size:69K  apt
 apt30m85.pdf pdf_icon

APT30M85SVRG

APT30M85BVFR 300V 40A 0.085 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes... See More ⇒

 6.2. Size:69K  apt
 apt30m85bvfr.pdf pdf_icon

APT30M85SVRG

APT30M85BVFR 300V 40A 0.085 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes... See More ⇒

 6.3. Size:64K  apt
 apt30m85bvr.pdf pdf_icon

APT30M85SVRG

APT30M85BVR 300V 40A 0.085 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower ... See More ⇒

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Detailed specifications: APT30M40B2VRG, APT30M60J, APT30M61BFLLG, APT30M61SFLLG, APT30M75BFLLG, APT30M75BLLG, APT30M75SFLLG, APT30M75SLLG, 7N60, APT30N60BC6, APT30N60KC6, APT30N60SC6, APT31M100B2, APT31M100L, APT31N60BCSG, APT31N60SCSG, APT32F120J

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