APT31N60SCSG Datasheet and Replacement
Type Designator: APT31N60SCSG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 255 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 3260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: D3PAK
APT31N60SCSG Datasheet (PDF)
apt31n60bcsg apt31n60scsg.pdf

FINAL DATA SHEET 600V 31A 0.100 APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET (B)COOLMOSPower SemiconductorsD3PAK Ultra Low RDS(ON) (S) Low Miller Capacitance Ultra Low Gate Charge, Qg D Avalanche Energy Rated Extreme dv/dt RatedG Popular TO-247 or Surface M
apt31n80jc3.pdf

APT31N80JC3800V 31A 0.145Super Junction MOSFETCOOLMOSPower Semiconductors Ultra low RDS(ON)"UL Recognized" Low Miller CapacitanceISOTOP Ultra Low Gate Charge, QgD Avalanche Energy RatedG N-Channel Enhancement Mode Popular SOT-227 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Paramete
apt31m100b2 apt31m100l.pdf

APT31M100B2 APT31M100L 1000V, 32A, 0.38 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and
Datasheet: APT30M75SLLG , APT30M85SVRG , APT30N60BC6 , APT30N60KC6 , APT30N60SC6 , APT31M100B2 , APT31M100L , APT31N60BCSG , EMB04N03H , APT32F120J , APT32M80J , APT33N90JCCU2 , APT33N90JCCU3 , APT34F100B2 , APT34F100L , APT34F60B , APT34F60BG .
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