APT38F80B2 Specs and Replacement

Type Designator: APT38F80B2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1040 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 41 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 805 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO-247

APT38F80B2 substitution

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APT38F80B2 datasheet

 ..1. Size:117K  microsemi
apt38f80b2 apt38f80l.pdf pdf_icon

APT38F80B2

APT38F80B2 APT38F80L 800V, 41A, 0.24 Max, trr 300ns N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap... See More ⇒

 8.1. Size:209K  microsemi
apt38f50j.pdf pdf_icon

APT38F80B2

APT38F50J 500V, 38A, 0.10 Max, trr 280ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high... See More ⇒

 9.1. Size:147K  microsemi
apt38n60bc6 apt38n60sc6.pdf pdf_icon

APT38F80B2

APT38N60BC6 APT38N60SC6 600V 38A 0.099 COOLMOS Power Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated D Popular TO-247 or Surface Mount D3 package. G S MAXIMUM RATINGS All Ratings per die TC = 25 C unless otherwise specified. Symbol Parame... See More ⇒

 9.2. Size:120K  microsemi
apt38m50j.pdf pdf_icon

APT38F80B2

APT38M50J 500V, 38A, 0.10 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ga... See More ⇒

Detailed specifications: APT3565BN, APT3580BN, APT36N90BC3G, APT37F50B, APT37F50S, APT37M100B2, APT37M100L, APT38F50J, IRF1404, APT38F80L, APT38M50J, APT38N60BC6, APT38N60SC6, APT39F60J, APT39M60J, APT4012BVFRG, APT4012SVFRG

Keywords - APT38F80B2 MOSFET specs

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