APT38N60BC6
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT38N60BC6
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 278
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 38
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 112
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 2428
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099
Ohm
Package:
TO-247
APT38N60BC6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT38N60BC6
Datasheet (PDF)
..1. Size:147K microsemi
apt38n60bc6 apt38n60sc6.pdf
APT38N60BC6 APT38N60SC6 600V 38A 0.099 COOLMOSPower Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt RatedD Popular TO-247 or Surface Mount D3 package.GSMAXIMUM RATINGS All Ratings per die: TC = 25C unless otherwise specified. Symbol Parame
..2. Size:376K inchange semiconductor
apt38n60bc6.pdf
isc N-Channel MOSFET Transistor APT38N60BC6FEATURESDrain Current I =38A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.099(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
9.1. Size:117K microsemi
apt38f80b2 apt38f80l.pdf
APT38F80B2 APT38F80L 800V, 41A, 0.24 Max, trr 300nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap
9.2. Size:120K microsemi
apt38m50j.pdf
APT38M50J 500V, 38A, 0.10 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga
9.3. Size:209K microsemi
apt38f50j.pdf
APT38F50J 500V, 38A, 0.10 Max, trr 280nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high
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