RF1S630SM Datasheet and Replacement. Cross Reference Search

RF1S630SM Datasheet (PDF)

..1. Size:129K fairchild semi
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IRF630, RF1S630SMData Sheet January 20029A, 200V, 0.400 Ohm, N-Channel Power FeaturesMOSFETs 9A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.400power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc

9.1. Size:128K fairchild semi
irf640 rf1s640 rf1s640sm.pdf pdf_icon

IRF640, RF1S640, RF1S640SMData Sheet January 200218A, 200V, 0.180 Ohm, N-Channel Power FeaturesMOSFETs 18A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.180power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakd

9.2. Size:66K harris semi
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RFG60P03, RFP60P03,S E M I C O N D U C T O RRF1S60P03, RF1S60P03SM60A, 30V, Avalanche Rated, P-ChannelDecember 1995 Enhancement-Mode Power MOSFETsFeatures PackagesJEDEC STYLE TO-247 60A, 30VSOURCE rDS(ON) = 0.027DRAIN Temperature Compensating PSPICE ModelGATEDRAIN Peak Current vs Pulse Width Curve(BOTTOMSIDE METAL) UIS Rating Curve +175oC

9.3. Size:51K harris semi
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IRF640, IRF641, IRF642,S E M I C O N D U C T O RIRF643, RF1S640, RF1S640SM16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm,N-Channel Power MOSFETsJanuary 1998Features Description 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.18 and 0.22MOSFETs designed, tested, and guar