APT44F80B2 Specs and Replacement
Type Designator: APT44F80B2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 930 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TO-247
APT44F80B2 substitution
- MOSFET ⓘ Cross-Reference Search
APT44F80B2 datasheet
apt44f80b2 apt44f80l.pdf
APT44F80B2 APT44F80L 800V, 47A, 0.21 Max trr 370ns N-Channel FREDFET T-Max Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-264 This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capabi... See More ⇒
apt44ga60b.pdf
APT44GA60B APT44GA60S 600V High Speed PT IGBT APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr... See More ⇒
apt44ga60s.pdf
APT44GA60B APT44GA60S 600V High Speed PT IGBT APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr... See More ⇒
apt44ga60bd30c.pdf
APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT APT44GA60SD30C POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAK achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech- nologies. Low gate charge and a greatly reduced ratio of ... See More ⇒
Detailed specifications: APT41M80B2, APT41M80L, APT42F50B, APT42F50S, APT43F60B2, APT43F60L, APT43M60B2, APT43M60L, 13N50, APT44F80L, APT4530AN, APT45M100J, APT47F60J, APT47M60J, APT47N60BC3G, APT47N60BCFG, APT47N60SC3G
Keywords - APT44F80B2 MOSFET specs
APT44F80B2 cross reference
APT44F80B2 equivalent finder
APT44F80B2 pdf lookup
APT44F80B2 substitution
APT44F80B2 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SMG2314NE
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
2sa771 | d667 | a965 transistor | hy3210 | d313 transistor equivalent | 2sb827 | c5200 datasheet | 2n2614
