All MOSFET. APT44F80B2 Datasheet

 

APT44F80B2 Datasheet and Replacement


   Type Designator: APT44F80B2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 930 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO-247
 

 APT44F80B2 substitution

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APT44F80B2 Datasheet (PDF)

 ..1. Size:208K  microsemi
 apt44f80b2 apt44f80l.pdf pdf_icon

APT44F80B2

APT44F80B2 APT44F80L 800V, 47A, 0.21 Max trr 370nsN-Channel FREDFET T-MaxPower MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-264This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capabi

 9.1. Size:219K  microsemi
 apt44ga60b.pdf pdf_icon

APT44F80B2

APT44GA60B APT44GA60S 600V High Speed PT IGBTAPT44GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 9.2. Size:219K  microsemi
 apt44ga60s.pdf pdf_icon

APT44F80B2

APT44GA60B APT44GA60S 600V High Speed PT IGBTAPT44GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 9.3. Size:226K  microsemi
 apt44ga60bd30c.pdf pdf_icon

APT44F80B2

APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBTAPT44GA60SD30CPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAKachieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-nologies. Low gate charge and a greatly reduced ratio of

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Datasheet: APT41M80B2 , APT41M80L , APT42F50B , APT42F50S , APT43F60B2 , APT43F60L , APT43M60B2 , APT43M60L , 13N50 , APT44F80L , APT4530AN , APT45M100J , APT47F60J , APT47M60J , APT47N60BC3G , APT47N60BCFG , APT47N60SC3G .

History: FQA90N08

Keywords - APT44F80B2 MOSFET datasheet

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