All MOSFET. APT44F80L Datasheet

 

APT44F80L MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT44F80L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 305 nC
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 930 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO-264

 APT44F80L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT44F80L Datasheet (PDF)

 ..1. Size:208K  microsemi
 apt44f80b2 apt44f80l.pdf

APT44F80L APT44F80L

APT44F80B2 APT44F80L 800V, 47A, 0.21 Max trr 370nsN-Channel FREDFET T-MaxPower MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-264This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capabi

 9.1. Size:219K  microsemi
 apt44ga60b.pdf

APT44F80L APT44F80L

APT44GA60B APT44GA60S 600V High Speed PT IGBTAPT44GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 9.2. Size:219K  microsemi
 apt44ga60s.pdf

APT44F80L APT44F80L

APT44GA60B APT44GA60S 600V High Speed PT IGBTAPT44GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 9.3. Size:226K  microsemi
 apt44ga60bd30c.pdf

APT44F80L APT44F80L

APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBTAPT44GA60SD30CPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAKachieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-nologies. Low gate charge and a greatly reduced ratio of

 9.4. Size:226K  microsemi
 apt44ga60sd30c.pdf

APT44F80L APT44F80L

APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBTAPT44GA60SD30CPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAKachieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-nologies. Low gate charge and a greatly reduced ratio of

 9.5. Size:237K  microsemi
 apt44ga60bd30 apt44ga60sd30.pdf

APT44F80L APT44F80L

APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBTAPT44GA60SD30POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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