All MOSFET. APT4F120S Datasheet

 

APT4F120S Datasheet and Replacement


   Type Designator: APT4F120S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 175 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.4 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: D3PAK
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APT4F120S Datasheet (PDF)

 ..1. Size:199K  microsemi
 apt4f120s.pdf pdf_icon

APT4F120S

APT4F120S 1200V, 4A, 4.2 Max Trr 195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, h

 6.1. Size:200K  microsemi
 apt4f120k.pdf pdf_icon

APT4F120S

APT4F120K 1200V, 4A, 4.2 Max Trr 195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-220This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge

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History: PSMN021-100YL | HLML6401 | FDMS86255ET150 | SIR464DP | VP2106 | IRLR7833 | AP85T03GH-HF

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