RF1S70N06SM Specs and Replacement
Type Designator: RF1S70N06SM
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO263AB
RF1S70N06SM substitution
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RF1S70N06SM datasheet
rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs 70A, 60V These are N-Channel power MOSFETs manufactured using rDS(on) = 0.014 the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silic... See More ⇒
rf1s70n06.pdf
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs 70A, 60V These are N-Channel power MOSFETs manufactured using rDS(on) = 0.014 the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silic... See More ⇒
rfp70n03 rf1s70n03sm.pdf
RFP70N03, RF1S70N03SM Data Sheet July 1999 File Number 3404.4 70A, 30V, 0.010 Ohm, N-Channel Power Features MOSFETs 70A, 30V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.010 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of sili... See More ⇒
Detailed specifications: RF1S50N06LESM, RF1S50N06SM, RF1S530SM, RF1S540SM, RF1S60P03SM, RF1S630SM, RF1S640SM, RF1S70N03SM, P60NF06, RF1S9530SM, RF1S9540SM, RF1S9630SM, RF1S9640SM, RFB18N10CS, RFD10P03L, RFD10P03LSM, RFD12N06RLE
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