RF1S70N06SM
MOSFET. Datasheet pdf. Equivalent
Type Designator: RF1S70N06SM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 70
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014
Ohm
Package:
TO263AB
RF1S70N06SM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RF1S70N06SM
Datasheet (PDF)
..1. Size:229K fairchild semi
rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf 
RFG70N06, RFP70N06, RF1S70N06,RF1S70N06SMData Sheet February 200570A, 60V, 0.014 Ohm, N-Channel Power FeaturesMOSFETs 70A, 60VThese are N-Channel power MOSFETs manufactured using rDS(on) = 0.014the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silic
5.1. Size:227K fairchild semi
rf1s70n06.pdf
RFG70N06, RFP70N06, RF1S70N06,RF1S70N06SMData Sheet February 200570A, 60V, 0.014 Ohm, N-Channel Power FeaturesMOSFETs 70A, 60VThese are N-Channel power MOSFETs manufactured using rDS(on) = 0.014the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silic
6.1. Size:142K intersil
rfp70n03 rf1s70n03sm.pdf
RFP70N03, RF1S70N03SMData Sheet July 1999 File Number 3404.470A, 30V, 0.010 Ohm, N-Channel Power FeaturesMOSFETs 70A, 30VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.010the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili
Datasheet: RF1S50N06LESM
, RF1S50N06SM
, RF1S530SM
, RF1S540SM
, RF1S60P03SM
, RF1S630SM
, RF1S640SM
, RF1S70N03SM
, 75N75
, RF1S9530SM
, RF1S9540SM
, RF1S9630SM
, RF1S9640SM
, RFB18N10CS
, RFD10P03L
, RFD10P03LSM
, RFD12N06RLE
.
