APT5014LVFRG Datasheet and Replacement
Type Designator: APT5014LVFRG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 450
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 37
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 737
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14
Ohm
Package:
TO-264
APT5014LVFRG substitution
-
MOSFET ⓘ Cross-Reference Search
APT5014LVFRG Datasheet (PDF)
..1. Size:114K apt
apt5014b2vfrg apt5014lvfrg.pdf 
APT5014B2VFRAPT5014LVFR500V 37A 0.140B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
5.1. Size:63K apt
apt5014lvr.pdf 
APT5014LVR500V 37A 0.140POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
7.1. Size:61K apt
apt5014bll.pdf 
APT5014BLLAPT5014SLL500V 35A 0.140WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching
7.2. Size:71K apt
apt5014bfll.pdf 
APT5014BFLLAPT5014SFLL500V 35A 0.140WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fas
7.3. Size:55K apt
apt5014b2vrg.pdf 
APT5014B2VR500V 37A 0.140POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lo
7.4. Size:62K apt
apt5014b2vr.pdf 
APT5014B2VR500V 37A 0.140POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lo
7.5. Size:61K apt
apt5014.pdf 
APT5014BLLAPT5014SLL500V 35A 0.140WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching
7.6. Size:164K apt
apt5014bfllg apt5014sfllg.pdf 
APT5014BFLLAPT5014SFLL500V 35A 0.140R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with ex
7.7. Size:33K apt
apt5014b2lc.pdf 
APT5014B2LCAPT5014LLC500V 37A 0.140WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,LLCdelivers exceptionally fast
7.8. Size:173K apt
apt5014bllg apt5014sllg.pdf 
APT5014BLLAPT5014SLL500V 35A 0.140R POWER MOS 7 MOSFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exce
7.9. Size:375K inchange semiconductor
apt5014bll.pdf 
isc N-Channel MOSFET Transistor APT5014BLLFEATURESDrain Current I =35A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.14(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
7.10. Size:375K inchange semiconductor
apt5014bfll.pdf 
isc N-Channel MOSFET Transistor APT5014BFLLFEATURESDrain Current I =35A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.14(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: APT5010B2LLG
, APT5010LFLLG
, APT5010LLLG
, APT5012JN
, APT5014B2VFRG
, APT5014B2VRG
, APT5014BFLLG
, APT5014BLLG
, 7N60
, APT5014SFLLG
, APT5014SLLG
, APT5015BVFRG
, 2SK1982-01MR
, BUK457-400A
, BUK457-400B
, 2SK125
, 2SJ410
.
History: S70N08ZS
| 2SK3322-S
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