APT5014SLLG MOSFET. Datasheet pdf. Equivalent
Type Designator: APT5014SLLG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 403 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 72 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 704 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: D3PAK
APT5014SLLG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT5014SLLG Datasheet (PDF)
apt5014bllg apt5014sllg.pdf
APT5014BLLAPT5014SLL500V 35A 0.140R POWER MOS 7 MOSFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exce
apt5014bfllg apt5014sfllg.pdf
APT5014BFLLAPT5014SFLL500V 35A 0.140R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with ex
apt5014bll.pdf
APT5014BLLAPT5014SLL500V 35A 0.140WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching
apt5014bfll.pdf
APT5014BFLLAPT5014SFLL500V 35A 0.140WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fas
apt5014lvr.pdf
APT5014LVR500V 37A 0.140POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
apt5014b2vrg.pdf
APT5014B2VR500V 37A 0.140POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lo
apt5014b2vr.pdf
APT5014B2VR500V 37A 0.140POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lo
apt5014.pdf
APT5014BLLAPT5014SLL500V 35A 0.140WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching
apt5014b2vfrg apt5014lvfrg.pdf
APT5014B2VFRAPT5014LVFR500V 37A 0.140B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt5014b2lc.pdf
APT5014B2LCAPT5014LLC500V 37A 0.140WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,LLCdelivers exceptionally fast
apt5014bll.pdf
isc N-Channel MOSFET Transistor APT5014BLLFEATURESDrain Current I =35A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.14(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt5014bfll.pdf
isc N-Channel MOSFET Transistor APT5014BFLLFEATURESDrain Current I =35A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.14(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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