2SK4027 Datasheet and Replacement

DATA SHEETwww.DataSheet4U.comJUNCTION FIELD EFFECT TRANSISTOR2SK4027N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK4027 is suitable for converter of ECM. +0.1 +0.10.4 0.050.16 0.06FEATURES High gain Marking -1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 k) Low noise 3 -

2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4020 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mmApplications MAX 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 0.56 (typ.) High forward transfer admittance : |Yfs| = 4.5

2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4021 Switching Regulator and DC/DC Converter Applications Unit: mmMotor Drive Applications MAX Low drain-source ON-resistance : RDS (ON) = 0.8 (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.)

2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4026 Switching Regulator Applications Unit: mm MAXFeatures Low drain-source ON-resistance: RDS (ON) = 6.4 (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.) Low leakage current: IDSS

2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4023 Switching Regulator, DC/DC Converter Unit: mm MAX 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: ID

2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4022 Switching Regulator, DC/DC Converter and Unit: mmMotor Drive Applications MAX 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ

"2SK402""2SK402""2SK402"

isc N-Channel MOSFET Transistor 2SK4020FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK4021FEATURESDrain Current : I = 4.5A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK4026FEATURESDrain Current : I = 1.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK4023FEATURESDrain Current : I = 1.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 4.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK4022FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK402DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching.High Cutoff frequency.No secondary breakdown.Suitable for switching reg