APT5016BFLLG PDF and Equivalents Search

 

APT5016BFLLG Specs and Replacement

Type Designator: APT5016BFLLG

Type of Transistor: MOFETS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 329 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO-247

APT5016BFLLG substitution

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APT5016BFLLG datasheet

 ..1. Size:201K  apt
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APT5016BFLLG

APT5016BFLL APT5016SFLL 500V 30A 0.160 R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with e... See More ⇒

 3.1. Size:63K  apt
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APT5016BFLLG

APT5016BFLL APT5016SFLL 500V 30A 0.160W TM BLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast... See More ⇒

 3.2. Size:375K  inchange semiconductor
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APT5016BFLLG

isc N-Channel MOSFET Transistor APT5016BFLL FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.16 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 6.1. Size:106K  apt
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APT5016BFLLG

APT5016BLL APT5016SLL 500V 30A 0.160 R POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with excep... See More ⇒

Detailed specifications: APT5015BVFRG, 2SK1982-01MR, BUK457-400A, BUK457-400B, 2SK125, 2SJ410, 2SK2518-01MR, 2SK4027, AO3400A, APT5016BLLG, APT5016SFLLG, APT5017SVFRG, APT5018BFLLG, APT5018SFLLG, APT5018SLL, APT5022BN, APT5024BLL

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