APT5016SFLLG
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT5016SFLLG
Type of Transistor: MOFETS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 329
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 72
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 600
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16
Ohm
Package:
D3PAK
APT5016SFLLG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT5016SFLLG
Datasheet (PDF)
..1. Size:201K apt
apt5016bfllg apt5016sfllg.pdf 
APT5016BFLLAPT5016SFLL500V 30A 0.160R POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with e
7.1. Size:63K apt
apt5016bfll.pdf
APT5016BFLLAPT5016SFLL500V 30A 0.160WTM BLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast
7.2. Size:106K apt
apt5016bllg.pdf
APT5016BLLAPT5016SLL500V 30A 0.160R POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with excep
7.3. Size:61K apt
apt5016bll.pdf
APT5016BLLAPT5016SLL500V 30A 0.160WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching
7.4. Size:63K apt
apt5016.pdf
APT5016BFLLAPT5016SFLL500V 30A 0.160WTM BLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast
7.5. Size:375K inchange semiconductor
apt5016bfll.pdf
isc N-Channel MOSFET Transistor APT5016BFLLFEATURESDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.16(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
7.6. Size:375K inchange semiconductor
apt5016bll.pdf
isc N-Channel MOSFET Transistor APT5016BLLFEATURESDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.16(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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