All MOSFET. APT50M65B2LLG Datasheet

 

APT50M65B2LLG MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT50M65B2LLG
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 694 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 67 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 141 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 1390 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO-247

 APT50M65B2LLG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT50M65B2LLG Datasheet (PDF)

 ..1. Size:98K  apt
 apt50m65b2llg apt50m65lllg.pdf

APT50M65B2LLG APT50M65B2LLG

APT50M65B2LLAPT50M65LLL500V 67A 0.065RB2LL POWER MOS 7 MOSFETT-MaxTMPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

 2.1. Size:68K  apt
 apt50m65b2ll.pdf

APT50M65B2LLG APT50M65B2LLG

APT50M65B2LLAPT50M65LLL500V 67A 0.065WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast s

 2.2. Size:376K  inchange semiconductor
 apt50m65b2ll.pdf

APT50M65B2LLG APT50M65B2LLG

isc N-Channel MOSFET Transistor APT50M65B2LLFEATURESDrain Current I = 67A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 4.1. Size:63K  apt
 apt50m65b2fll.pdf

APT50M65B2LLG APT50M65B2LLG

APT50M65B2FLLAPT50M65LFLL500V 67A 0.065WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptio

 4.2. Size:376K  inchange semiconductor
 apt50m65b2fll.pdf

APT50M65B2LLG APT50M65B2LLG

isc N-Channel MOSFET Transistor APT50M65B2FLLFEATURESDrain Current I = 67A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top