RFB18N10CS Datasheet and Replacement
Type Designator: RFB18N10CS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TS001AA
RFB18N10CS substitution
RFB18N10CS Datasheet (PDF)
irfb18n50k.pdf

PD - 93926BIRFB18N50KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply500V 0.26 17A High Speed Power Switching Hard Switched and High FrequencyCircuitsBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized
irfb18n50kpbf.pdf

SMPS MOSFETPD - 95472AIRFB18N50KPbFHEXFET Power MOSFETApplicationsl Switch Mode Power Supply (SMPS)VDSS RDS(on) typ. IDl Uninterruptible Power Supply500V 0.26 17Al High Speed Power Switchingl Hard Switched and High FrequencyCircuitsl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
irfb18n50k.pdf

IRFB18N50K, SiHFB18N50KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 120COMPLIANTRuggednessQgs (nC) 34 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 54and CurrentCon
Datasheet: RF1S630SM , RF1S640SM , RF1S70N03SM , RF1S70N06SM , RF1S9530SM , RF1S9540SM , RF1S9630SM , RF1S9640SM , IRF9640 , RFD10P03L , RFD10P03LSM , RFD12N06RLE , RFD12N06RLESM , RFD14N05 , RFD14N05L , RFD14N05LSM , RFD14N05SM .
History: SI4542DY
Keywords - RFB18N10CS MOSFET datasheet
RFB18N10CS cross reference
RFB18N10CS equivalent finder
RFB18N10CS lookup
RFB18N10CS substitution
RFB18N10CS replacement
History: SI4542DY



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