APT50M80B2VFRG
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT50M80B2VFRG
Type of Transistor: MOFETS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 625
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 58
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 423
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 1286
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package:
TO-247
APT50M80B2VFRG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT50M80B2VFRG
Datasheet (PDF)
..1. Size:94K apt
apt50m80b2vfrg apt50m80lvfrg.pdf 
APT50M80B2VFRAPT50M80LVFR500V 58A 0.080POWER MOS V FREDFETTMT-MaxPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
1.1. Size:33K apt
apt50m80b2vfr.pdf
APT50M80B2VFR500V 58A 0.080WPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T
1.2. Size:376K inchange semiconductor
apt50m80b2vfr.pdf
isc N-Channel MOSFET Transistor APT50M80B2VFRFEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.08(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
3.1. Size:36K apt
apt50m80b2vr.pdf
APT50M80B2VRAPT50M80LVR500V 58A 0.080WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificatio
3.2. Size:92K apt
apt50m80b2vrg apt50m80lvrg.pdf
APT50M80B2VRAPT50M80LVR500V 58A 0.080POWER MOS VTMT-MaxPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Identical
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