APT50N60JCCU2 Datasheet and Replacement. Cross Reference Search

..1. Size:62K microsemi
apt50n60jccu2.pdf pdf_icon

APT50N60JCCU2VDSS = 600V ISOTOP Boost chopper RDSon = 45m max @ Tj = 25C Super Junction ID = 50A @ Tc = 25C MOSFET Power ModuleApplication AC and DC motor control K Switched Mode Power Supplies Power Factor Correction Brake switch DFeatures G - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge S - Avalanche e

9.1. Size:26K 1
apt50gf60ar.pdf pdf_icon

APT50GF60AR600V 55AFast IGBTTO-3The Fast IGBT is a new generation of high voltage power IGBTs. Using(TO-204AE)Non-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzC Low Tail Current Ultra Low Leakage Current Avalanche Rated

9.2. Size:26K 1
apt50gf120hr.pdf pdf_icon

APT50GF120HR1200V 62AFast IGBTTO-258The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage CurrentGG Avalanche Rated

9.3. Size:112K 1
apt50gf60b2rd apt50gf60lrd.pdf pdf_icon

APT50GF60B2RDAPT50GF60LRD600V 80AAPT50GF60B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC Low Forward Voltage Drop

9.4. Size:73K apt
apt50m50jvfr.pdf pdf_icon

APT50M50JVFR500V 77A 0.050POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

9.5. Size:61K apt
apt5014bll.pdf pdf_icon

APT5014BLLAPT5014SLL500V 35A 0.140WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching

9.6. Size:65K apt
apt5028svr.pdf pdf_icon

APT5028SVR500V 20A 0.280POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

9.7. Size:94K apt
apt5018bfllg apt5018sfllg.pdf pdf_icon

APT5018BFLLAPT5018SFLL500V 27A 0.180BLLR POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLal

9.8. Size:60K apt
apt5010jll.pdf pdf_icon

APT5010JLL500V 44A 0.100 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's"

9.9. Size:196K apt
apt50gp60b2df2.pdf pdf_icon

TYPICAL PERFORMANCE CURVESAPT50GP60B2DF2APT50GP60B2DF2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 200 kH

9.10. Size:47K apt
apt5022bn.pdf pdf_icon

DTO-247GAPT5020BN 500V 28.0A 0.20SAPT5022BN 500V 27.0A 0.22POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 5020BN 5022BN UNITVDSS Drain-Source Voltage500 500 VoltsID Continuous Drain Current @ TC = 25C28 27AmpsIDM Pulsed Drain Current 1112 108

9.11. Size:33K apt
apt50m80.pdf pdf_icon

APT50M80B2VFR500V 58A 0.080WPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

9.12. Size:71K apt
apt5024bfll.pdf pdf_icon

APT5024BFLLAPT5024SFLL500V 22A 0.240WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fas

9.13. Size:77K apt
apt50m50jll.pdf pdf_icon

APT50M50JLL500V 71A 0.050R POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"along with exceptionally

9.14. Size:187K apt
apt50gn120b2.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GN120B2APT50GN120B21200VUtilizing the latest Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight T-Maxparameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate r

9.15. Size:112K apt
apt5010jvru3.pdf pdf_icon

APT5010JVRU3500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalan

9.16. Size:375K apt
apt4530an apt5025an apt5030an.pdf pdf_icon

9.17. Size:170K apt
apt5024bll apt5024sll.pdf pdf_icon

APT5024BLLAPT5024SLL500V 22A 0.240RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong

9.18. Size:32K apt
apt5024svr.pdf pdf_icon

APT5024SVR500V 22A 0.240POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementD3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche TestedD Lower Leak

9.19. Size:111K apt
apt5010jvru2.pdf pdf_icon

APT5010JVRU2500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalan

9.20. Size:104K apt
apt5018sll.pdf pdf_icon

APT5018BLLAPT5018SLL500V 27A 0.180RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong

9.21. Size:64K apt
apt5010b2vfr.pdf pdf_icon

APT5010B2VFR500V 47A 0.100POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche

9.22. Size:60K apt
apt50m60jn.pdf pdf_icon

DGAPT50M60JN 500V 71A 0.06OS"UL Recognized" File No. E145592 (S)ISOTOPPOWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 50M60JN UNITVDSS Drain-Source Voltage500 VoltsID Continuous Drain Current @ TC = 25C71AmpsIDM, lLM Pulse

9.23. Size:54K apt
apt5012jn.pdf pdf_icon

DGAPT5010JN 500V 48.0A 0.10SAPT5012JN 500V 43.0A 0.12ISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 5010JN 5012JN UNITVDSS Drain-Source Voltage500 500 VoltsID Continuous Drain Cu

9.24. Size:71K apt
apt5014bfll.pdf pdf_icon

APT5014BFLLAPT5014SFLL500V 35A 0.140WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fas

9.25. Size:59K apt
apt5026hvr.pdf pdf_icon

APT5026HVR500V 18.5A 0.260POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

9.26. Size:51K apt
apt5025bn.pdf pdf_icon

DTO-247GAPT5025BN 500V 23.0A 0.25SAPT5030BN 500V 21.0A 0.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 5025BN 5030BN UNITVDSS Drain-Source Voltage500 500 VoltsID Continuous Drain Current @ TC = 25C23 21AmpsIDM Pulsed Drain Current 192 84V

9.27. Size:37K apt
apt50gf120b2r.pdf pdf_icon

APT50GF120B2RAPT50GF120LR1200V 80AAPT50GF120B2RFast IGBTT-MaxTO-264(B2R)(LR)The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.GC G Low Forward Voltage Drop High Freq. Switching to 20KHzE CAPT50GF120LRC E

9.28. Size:425K apt
apt50gp60b2dq2g.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2(G) 600V APT50GP60B2DQ2 APT50GP60B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

9.29. Size:33K apt
apt50m80b2vfr.pdf pdf_icon

APT50M80B2VFR500V 58A 0.080WPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

9.30. Size:60K apt
apt50m65jll.pdf pdf_icon

APT50M65JLL500V 60A 0.065 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

9.31. Size:167K apt
apt50m60l2vrg.pdf pdf_icon

APT50M60L2VR500V 77A 0.060 POWER MOS V MOSFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package

9.32. Size:79K apt
apt50m60l2vfr.pdf pdf_icon

APT50M60L2VFR500V 77A 0.060WPOWER MOS V FREDFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package Faster Switching D

9.33. Size:60K apt
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APT5015BVR500V 32A 0.150POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

9.34. Size:36K apt
apt50m50pvr.pdf pdf_icon

APT50M50PVR500V 74.5A 0.050POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V alsoachieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low

9.35. Size:428K apt
apt50gt120lrdq2g.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GT120LRDQ2(G) 1200V APT50GT120LRDQ2 APT50GT120LRDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Thunderbolt IGBTTO-264The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage

9.36. Size:68K apt
apt50m75b2ll.pdf pdf_icon

APT50M75B2LLAPT50M75LLL500V 57A 0.075WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast s

9.37. Size:96K apt
apt50gp60sg.pdf pdf_icon

APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26

9.38. Size:94K apt
apt50m80b2vfrg apt50m80lvfrg.pdf pdf_icon

APT50M80B2VFRAPT50M80LVFR500V 58A 0.080POWER MOS V FREDFETTMT-MaxPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

9.39. Size:61K apt
apt5030avr.pdf pdf_icon

APT5030AVR500V 14.7A 0.300POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

9.40. Size:467K apt
apt50gt60brdq2g.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GT60BRDQ2(G) 600V APT50GT60BRDQ2 APT50GT60BRDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Thunderbolt IGBTThe Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. GCE Low Forward Voltage Drop

9.41. Size:64K apt
apt5010lvr.pdf pdf_icon

APT5010LVR500V 47A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lower

9.42. Size:74K apt
apt50m85jvr.pdf pdf_icon

APT50M85JVR500V 50A 0.085POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

9.43. Size:34K apt
apt50m80jlc.pdf pdf_icon

APT50M80JLC500V 52A 0.080 WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,"UL Recognized"delivers exceptionally fast switching speeds.ISOT

9.44. Size:605K apt
apt50gt120ju3.pdf pdf_icon

APT50GT120JU3ISOTOP Buck chopper VCES = 1200V IC = 50A @ Tc = 80C Trench IGBT CApplication AC and DC motor control Switched Mode Power Supplies GFeatures Trench + Field Stop IGBT Technology E- Low voltage drop- Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche

9.45. Size:62K apt
apt50m75jfll.pdf pdf_icon

APT50M75JFLL500V 52A 0.075WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wit

9.46. Size:210K apt
apt50gp60jdf2.pdf pdf_icon

APT50GP60JDF2600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPfiswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 19AC Low

9.47. Size:76K apt
apt50m85jvfr.pdf pdf_icon

APT50M85JVFR500V 50A 0.085POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

9.48. Size:36K apt
apt50m50.pdf pdf_icon

APT50M50PVR500V 74.5A 0.050POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V alsoachieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low

9.49. Size:62K apt
apt5020svr.pdf pdf_icon

APT5020SVR500V 26A 0.200POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Le

9.50. Size:60K apt
apt5010jn.pdf pdf_icon

DGAPT5010JN 500V 48.0A 0.10SAPT5012JN 500V 43.0A 0.12ISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 5010JN 5012JN UNITVDSS Drain-Source Voltage500 500 VoltsID Continuous Drain Cu

9.51. Size:61K apt
apt5010b2vr.pdf pdf_icon

APT5010B2VR500V 47A 0.100POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low

9.52. Size:95K apt
apt50gp60s.pdf pdf_icon

APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26

9.53. Size:62K apt
apt50m38jfll.pdf pdf_icon

APT50M38JFLL500V 91A 0.038WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wit

9.54. Size:158K apt
apt50m60l2vfrg.pdf pdf_icon

APT50M60L2VFR500V 77A 0.060 POWER MOS V FREDFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D TO-264 MAX Packa

9.55. Size:51K apt
apt5020bn.pdf pdf_icon

DTO-247GAPT5020BN 500V 28.0A 0.20SAPT5022BN 500V 27.0A 0.22POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 5020BN 5022BN UNITVDSS Drain-Source Voltage500 500 VoltsID Continuous Drain Current @ TC = 25C28 27AmpsIDM Pulsed Drain Current 1112 108

9.56. Size:468K apt
apt50gf60ju3.pdf pdf_icon

APT50GF60JU3ISOTOP Buck chopper VCES = 600V IC = 50A @ Tc = 90CNPT IGBT CApplication AC and DC motor control Switched Mode Power Supplies GFeatures Non Punch Through (NPT) THUNDERBOLT IGBT - Low voltage dropE- Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche

9.57. Size:96K apt
apt5027.pdf pdf_icon

http://www.chipdocs.com http://www.chipdocs.com

9.58. Size:36K apt
apt5030bn.pdf pdf_icon

DTO-247GAPT5025BN 500V 23.0A 0.25SAPT5030BN 500V 21.0A 0.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 5025BN 5030BN UNITVDSS Drain-Source Voltage500 500 VoltsID Continuous Drain Current @ TC = 25C23 21AmpsIDM Pulsed Drain Current 192 84V

9.59. Size:468K apt
apt50gf60ju2.pdf pdf_icon

APT50GF60JU2ISOTOP Boost chopper VCES = 600V IC = 50A @ Tc = 90CNPT IGBT KApplication AC and DC motor control Switched Mode Power Supplies Power Factor Correction C Brake switch Features G Non Punch Through (NPT) THUNDERBOLT IGBT - Low voltage drop- Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes -

9.60. Size:64K apt
apt5010b2lc.pdf pdf_icon

APT5010B2LCAPT5010LLC500V 47A 0.100WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss andCrss. Lower gate charge coupled with Power MOS VITM optimized gateLLClayout, delivers exceptionally fast

9.61. Size:59K apt
apt5024bvr.pdf pdf_icon

APT5024BVR500V 22A 0.240POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

9.62. Size:62K apt
apt5028bvr.pdf pdf_icon

APT5028BVR500V 20A 0.280POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

9.63. Size:292K apt
apt50gn60bg.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GN60B(G) 600V APT50GN60B APT50GN60BG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

9.64. Size:190K apt
apt50gn120b2g.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GN120B2(G) 1200V APT50GN120B2 APT50GN120B2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TMT-Maxresults in superior VCE(on) performance. Easy paralleling results from very t

9.65. Size:165K apt
apt50m60jvfr.pdf pdf_icon

APT50M60JVFR500V 63A 0.060 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Popula

9.66. Size:61K apt
apt5020bvfr.pdf pdf_icon

APT5020BVFR500V 26A 0.200POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

9.67. Size:88K apt
apt50gp60b.pdf pdf_icon

APT50GP60B600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 200 kHz operation @ 400V, 26AC Low Gate Charge

9.68. Size:93K apt
apt5040kfllg.pdf pdf_icon

APT5040KFLL500V 17A 0.400R POWER MOS 7 FREDFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)Gand Qg. Power MOS 7 combines lower conduction and switching losses DSalong with exceptionally

9.69. Size:61K apt
apt5012wvr.pdf pdf_icon

APT5012WVR500V 40A 0.120POWER MOS VTO-267Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

9.70. Size:63K apt
apt5017svr.pdf pdf_icon

APT5017SVR500V 30A 0.170POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower L

9.71. Size:99K apt
apt50m65lfll.pdf pdf_icon

APT50M65B2FLLAPT50M65LFLL500V 67A 0.065RB2FLL POWER MOS 7 FREDFETT-MaxTMPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesL

9.72. Size:39K apt
apt50m85b2vfr.pdf pdf_icon

APT50M85B2VFRAPT50M85LVFR500V 56A 0.085WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

9.73. Size:58K apt
apt5022avr.pdf pdf_icon

APT5022AVR500V 21A 0.220POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower L

9.74. Size:64K apt
apt5020svfr.pdf pdf_icon

APT5020SVFR500V 26A 0.200POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

9.75. Size:164K apt
apt50m75b2llg apt50m75lllg.pdf pdf_icon

APT50M75B2LLAPT50M75LLL500V 57A 0.075RB2LL POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalo

9.76. Size:61K apt
apt5032cvr.pdf pdf_icon

APT5032CVR500V 14A 0.320POWER MOS VTO-254TO-254Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested

9.77. Size:63K apt
apt5014lvr.pdf pdf_icon

APT5014LVR500V 37A 0.140POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

9.78. Size:113K apt
apt5024svfrg.pdf pdf_icon

APT5024BVFRAPT5024SVFR500V 22A 0.240BVFRFREDFETPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVFRalso achieves faster switching speeds through optimized gate layout.

9.79. Size:165K apt
apt50m75b2fllg apt50m75lfllg.pdf pdf_icon

APT50M75B2FLLAPT50M75LFLL500V 57A 0.075RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses

9.80. Size:34K apt
apt5017blc.pdf pdf_icon

APT5017BLCAPT5017SLC500V 30A 0.170WBLCTMPOWER MOS VID3PAKPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,SLCdelivers exceptionally fast switc

9.81. Size:34K apt
apt5020blc.pdf pdf_icon

APT5020BLCAPT5020SLC500V 26A 0.200WBLCTMPOWER MOS VID3PAKPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,SLCdelivers exceptionally fast switc

9.82. Size:605K apt
apt50gt120ju2.pdf pdf_icon

APT50GT120JU2ISOTOP Boost chopper VCES = 1200V IC = 50A @ Tc = 80C Trench IGBT KApplication AC and DC motor control Switched Mode Power Supplies Power Factor Correction C Brake switch Features G Trench + Field Stop IGBT Technology - Low voltage drop- Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes -

9.83. Size:34K apt
apt5010jlc.pdf pdf_icon

APT5010JLC500V 44A 0.100 WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,"UL Recognized"delivers exceptionally fast switching speeds.ISOTO

9.84. Size:55K apt
apt5014b2vrg.pdf pdf_icon

APT5014B2VR500V 37A 0.140POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lo

9.85. Size:450K apt
apt50gp60jdq2.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GP60JDQ2 600V APT50GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low

9.86. Size:60K apt
apt50m38jll.pdf pdf_icon

APT50M38JLL500V 91A 0.038 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

9.87. Size:62K apt
apt5014b2vr.pdf pdf_icon

APT5014B2VR500V 37A 0.140POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lo

9.88. Size:63K apt
apt5010b2fll.pdf pdf_icon

APT5010B2FLLAPT5010LFLL500V 46A 0.100WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona

9.89. Size:226K apt
apt50gn120l2dq2g.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2(G) 1200V APT50GN120L2DQ2 APT50GN120L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264Maxresults in superior VCE(on) performance. Easy paralleling result

9.90. Size:80K apt
apt50gf60br.pdf pdf_icon

APT50GF60BRAPT50GF60BR600V 75AFast IGBTTO-247The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.C Low Forward Voltage Drop High Freq. Switching to 20KHzGCG Low Tail Current Ultra Low Leakage Current E Avalan

9.91. Size:71K apt
apt5010jvr.pdf pdf_icon

APT5010JVR500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T

9.92. Size:33K apt
apt50m60l2vr.pdf pdf_icon

APT50M60L2VR500V 77A 0.060WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD

9.93. Size:60K apt
apt5019hvr.pdf pdf_icon

APT5019HVR500V 24A 0.190POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

9.94. Size:117K apt
apt5010b2lc-47434900.pdf pdf_icon

APT5010B2LC500V 47A 0.100 WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageT-MAXN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and C .rssLower gate charge coupled with Power MOS VITM optimized gate layout,delivers exceptionally fast switching speeds.D L

9.95. Size:60K apt
apt5015bvr.pdf pdf_icon

APT5015BVR500V 32A 0.150POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

9.96. Size:59K apt
apt5020bvr.pdf pdf_icon

APT5020BVR500V 26A 0.200POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

9.97. Size:98K apt
apt50m65b2llg apt50m65lllg.pdf pdf_icon

APT50M65B2LLAPT50M65LLL500V 67A 0.065RB2LL POWER MOS 7 MOSFETT-MaxTMPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

9.98. Size:115K apt
apt5015bvfrg.pdf pdf_icon

APT5015BVFRAPT5015SVFR500V 32A 0.150BVFRPOWER MOS V FREDFETD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V SVFRalso achieves faster switching speeds through optimized gate layout.

9.99. Size:201K apt
apt5016bfllg apt5016sfllg.pdf pdf_icon

APT5016BFLLAPT5016SFLL500V 30A 0.160R POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with e

9.100. Size:162K apt
apt5024bllg.pdf pdf_icon

APT5024BLLAPT5024SLL500V 22A 0.240RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong

9.101. Size:61K apt
apt5014.pdf pdf_icon

APT5014BLLAPT5014SLL500V 35A 0.140WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching

9.102. Size:61K apt
apt5012.pdf pdf_icon

APT5012WVR500V 40A 0.120POWER MOS VTO-267Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

9.103. Size:443K apt
apt50gf120jrdq3.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 1200V APT50GF120JRDQ3FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and fast switching speed."UL Recognized"ISOTOP file # E145592 Low Forwa

9.104. Size:114K apt
apt5014b2vfrg apt5014lvfrg.pdf pdf_icon

APT5014B2VFRAPT5014LVFR500V 37A 0.140B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

9.105. Size:63K apt
apt50m65.pdf pdf_icon

APT50M65B2FLLAPT50M65LFLL500V 67A 0.065WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptio

9.106. Size:66K apt
apt5010lvfr.pdf pdf_icon

APT5010LVFR500V 47A 0.100POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

9.107. Size:170K apt
apt5010b2llg apt5010lllg.pdf pdf_icon

APT5010B2LLAPT5010LLL500V 46A 0.100B2LLR POWER MOS 7 MOSFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

9.108. Size:63K apt
apt5016bfll.pdf pdf_icon

APT5016BFLLAPT5016SFLL500V 30A 0.160WTM BLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

9.109. Size:164K apt
apt5014bfllg apt5014sfllg.pdf pdf_icon

APT5014BFLLAPT5014SFLL500V 35A 0.140R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with ex

9.110. Size:60K apt
apt5017bvr.pdf pdf_icon

APT5017BVR500V 30A 0.170POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

9.111. Size:95K apt
apt50m50l2llg.pdf pdf_icon

APT50M50L2LL500V 89A 0.050R POWER MOS 7 MOSFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-ChannelMaxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fa

9.112. Size:60K apt
apt50m75jll.pdf pdf_icon

APT50M75JLL500V 52A 0.075 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

9.113. Size:40K apt
apt50m85lvr.pdf pdf_icon

APT50M85B2VRAPT50M85LVR500V 56A 0.085WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificatio

9.114. Size:36K apt
apt50m80b2vr.pdf pdf_icon

APT50M80B2VRAPT50M80LVR500V 58A 0.080WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificatio

9.115. Size:63K apt
apt5018bfll.pdf pdf_icon

APT5018BFLLAPT5018SFLL500V 27A 0.180WTM BLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

9.116. Size:147K apt
apt50m60jvr.pdf pdf_icon

APT50M60JVR500V 63A 0.060 POWER MOS V MOSFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Popular

9.117. Size:36K apt
apt50m85b2vr.pdf pdf_icon

APT50M85B2VRAPT50M85LVR500V 56A 0.085WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificatio

9.118. Size:33K apt
apt5014b2lc.pdf pdf_icon

APT5014B2LCAPT5014LLC500V 37A 0.140WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,LLCdelivers exceptionally fast

9.119. Size:171K apt
apt5010b2fllg apt5010lfllg.pdf pdf_icon

APT5010B2FLLAPT5010LFLL500V 46A 0.100RB2FLL POWER MOS 7 FREDFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesa

9.120. Size:34K apt
apt50m80b2lc.pdf pdf_icon

APT50M80B2LCAPT50M80LLC500V 58A 0.080WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,LLCdelivers exceptionally fas

9.121. Size:106K apt
apt5016bllg.pdf pdf_icon

APT5016BLLAPT5016SLL500V 30A 0.160R POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with excep

9.122. Size:68K apt
apt5010b2ll.pdf pdf_icon

APT5010B2LLAPT5010LLL500V 46A 0.100WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

9.123. Size:137K apt
apt50m85b2vfrg apt50m85lvfrg.pdf pdf_icon

APT50M85B2VFRAPT50M85LVFR500V 56A 0.085B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout

9.124. Size:173K apt
apt5014bllg apt5014sllg.pdf pdf_icon

APT5014BLLAPT5014SLL500V 35A 0.140R POWER MOS 7 MOSFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exce

9.125. Size:63K apt
apt5010b2.pdf pdf_icon

APT5010B2FLLAPT5010LFLL500V 46A 0.100WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona

9.126. Size:63K apt
apt50m65b2fll.pdf pdf_icon

APT50M65B2FLLAPT50M65LFLL500V 67A 0.065WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptio

9.127. Size:52K apt
apt50gf120jrd.pdf pdf_icon

APT50GF120JRD1200V 75AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed."UL Recognized"ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHzC L

9.128. Size:71K apt
apt50m50jfll.pdf pdf_icon

APT50M50JFLL500V 71A 0.050WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wit

9.129. Size:95K apt
apt50m50l2fllg.pdf pdf_icon

APT50M50L2FLL500V 89A 0.050R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-ChannelMaxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally

9.130. Size:71K apt
apt50m50jvr.pdf pdf_icon

APT50M50JVR500V 77A 0.050POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

9.131. Size:61K apt
apt5016bll.pdf pdf_icon

APT5016BLLAPT5016SLL500V 30A 0.160WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching

9.132. Size:62K apt
apt5017bvfr.pdf pdf_icon

APT5017BVFR500V 30A 0.170POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

9.133. Size:63K apt
apt5017.pdf pdf_icon

APT5017SVR500V 30A 0.170POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower L

9.134. Size:63K apt
apt50m50l2ll.pdf pdf_icon

APT50M50L2LL500V 87A 0.050WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent

9.135. Size:61K apt
apt5018bll.pdf pdf_icon

APT5018BLLAPT5018SLL500V 27A 0.180WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching

9.136. Size:25K apt
apt50gf60hr.pdf pdf_icon

APT50GF60HR600V 55AFast IGBTTO-258The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage CurrentGG Avalanche Rated

9.137. Size:34K apt
apt50m50jlc.pdf pdf_icon

APT50M50JLC500V 77A 0.050 WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,"UL Recognized"delivers exceptionally fast switching speeds.ISOT

9.138. Size:65K apt
apt50m50l2fll.pdf pdf_icon

APT50M50L2FLL500V 89A 0.050WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds

9.139. Size:63K apt
apt50m65jfll.pdf pdf_icon

APT50M65JFLL500V 60A 0.065WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wit

9.140. Size:63K apt
apt5010jfll.pdf pdf_icon

APT5010JFLL500V 44A 0.100WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with

9.141. Size:124K apt
apt50m75jllu2.pdf pdf_icon

APT50M75JLLU2APT50M75JLLU2500V 51A 0.075WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inher

9.142. Size:61K apt
apt5024bvfr.pdf pdf_icon

APT5024BVFR500V 22A 0.240POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

9.143. Size:68K apt
apt50m65b2ll.pdf pdf_icon

APT50M65B2LLAPT50M65LLL500V 67A 0.065WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast s

9.144. Size:105K apt
apt50gp60j.pdf pdf_icon

APT50GP60J600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 19AC Low Gat

9.145. Size:96K apt
apt50gp60bg.pdf pdf_icon

APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26

9.146. Size:62K apt
apt5017svfrg.pdf pdf_icon

APT5017BVFRAPT5017SVFR500V 30A 0.170POWER MOS V FREDFETTO-247D3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Fast

9.147. Size:63K apt
apt50m75b2fll.pdf pdf_icon

APT50M75B2FLLAPT50M75LFLL500V 57A 0.075WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptio

9.148. Size:73K apt
apt5010jvfr.pdf pdf_icon

APT5010JVFR500V 44A 0.100POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

9.149. Size:52K apt
apt5040cnr.pdf pdf_icon

DTO-254GSAPT5040CNR 500V 13.0A 0.400TMPOWER MOS IV Avalanche RatedN - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Faster Switching 100% Avalanche Tested Popular TO-254 Package Low Gate Charge Similar to the 2N7228, JX2N7228 and JV2N7228MAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT5040CNR UNITVDSS Drai

9.150. Size:63K apt
apt5016.pdf pdf_icon

APT5016BFLLAPT5016SFLL500V 30A 0.160WTM BLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast

9.151. Size:28K apt
apt5015blc.pdf pdf_icon

APT5015BLC500V 32A 0.150 WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,delivers exceptionally fast switching speeds.D Lower G

9.152. Size:112K apt
apt50gf60b2rd.pdf pdf_icon

APT50GF60B2RDAPT50GF60LRD600V 80AAPT50GF60B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC Low Forward Voltage Drop

9.153. Size:92K apt
apt50m80b2vrg apt50m80lvrg.pdf pdf_icon

APT50M80B2VRAPT50M80LVR500V 58A 0.080POWER MOS VTMT-MaxPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Identical

9.154. Size:60K apt
apt5024avr.pdf pdf_icon

APT5024AVR500V 18.5A 0.240POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

9.155. Size:62K apt
apt5020.pdf pdf_icon

APT5020SVR500V 26A 0.200POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Le

9.156. Size:151K microsemi
apt50gt60srg.pdf pdf_icon

TYPICAL PERFORMANCE CURVES 600VAPT50GT60BR_SR(G) APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B)Thunderbolt IGBTD3PAK(S)CThe Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch G EThrough Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast Gswitching s

9.157. Size:607K microsemi
apt50gs60srdq2g.pdf pdf_icon

APT50GS60BRDQ2(G)APT50GS60SRDQ2(G)600V, 50A, VCE(ON) = 2.8V TypicalThunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' DiodeThe Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ

9.158. Size:1104K microsemi
apt50gt120b2rdq2g.pdf pdf_icon

APT50GT120B2RDQ2G1200V, 50A, VCE(ON) = 3.2V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features Low Forward Voltage Drop RBSOA and SCSOA Rated Low Tail Current High Frequency Switching to 50KHz

9.159. Size:196K microsemi
apt50gt120b2rg.pdf pdf_icon

APT50GT120B2R(G) APT50GT120LR(G)1200V, 50A, VCE(ON) = 3.2V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features Low Forward Voltage Drop RBSOA and SCSOA Rated Low Tail Current High Frequency Sw

9.160. Size:209K microsemi
apt50gt120b2rdlg.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GT120B2RDL(G) 1200VAPT50GT120B2RDL(G)*G Denotes RoHS Compliant, Pb Free Terminal Finish.Resonant Mode IGBTThe Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT of-fers superior ruggedness and ultrafast switching speed.Typical Applicatio

9.161. Size:151K microsemi
apt50gt60brg.pdf pdf_icon

TYPICAL PERFORMANCE CURVES 600VAPT50GT60BR_SR(G) APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B)Thunderbolt IGBTD3PAK(S)CThe Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch G EThrough Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast Gswitching s

9.162. Size:526K microsemi
apt50gf120b2rg.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)FAST IGBTT-Max TO-264The Fast IGBT is a new generation of high voltage power IGBTs. Using (L)Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt

9.163. Size:189K microsemi
apt50gp60ldlg.pdf pdf_icon

TYPICAL PERFORMANCE CURVESAPT50GP60LDL(G)APT50GP60LDL(G)600V, 50A, VCE(ON) = 2.2V TypicalResonant Mode Combi IGBTThe POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmo

9.164. Size:216K microsemi
apt5024sfll apt5024sfllg.pdf pdf_icon

APT5024BFLL APT5024SFLL 500V 22A 0.240BFLLR POWER MOS 7 FREDFET (B)Power MOS 7 is a new generation of low loss, high voltage, N-ChannelD3PAKenhancement mode power MOSFETS. Both conduction and switch-(S)ing losses are addressed with Power MOS 7 by significantly lowering CG ERDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along wi

9.165. Size:526K microsemi
apt50gf120lrg.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)FAST IGBTT-Max TO-264The Fast IGBT is a new generation of high voltage power IGBTs. Using (L)Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt

9.166. Size:207K microsemi
apt50gt60brdlg.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GT60BRDL(G) 600VAPT50GT60BRDL(G)*G Denotes RoHS Compliant, Pb Free Terminal Finish.Resonant Mode Combi IGBTThe Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT of-fers superior ruggedness and ultrafast switching speed.Typical Applicati

9.167. Size:607K microsemi
apt50gs60brdq2g.pdf pdf_icon

APT50GS60BRDQ2(G)APT50GS60SRDQ2(G)600V, 50A, VCE(ON) = 2.8V TypicalThunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' DiodeThe Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ

9.168. Size:375K inchange semiconductor
apt5014bll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5014BLLFEATURESDrain Current I =35A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.14(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.169. Size:375K inchange semiconductor
apt5024bfll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5024BFLLFEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.24(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.170. Size:255K inchange semiconductor
apt50m75lfll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT50M75LFLLFEATURESDrain Current I = 57A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.075(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

9.171. Size:375K inchange semiconductor
apt5014bfll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5014BFLLFEATURESDrain Current I =35A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.14(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.172. Size:375K inchange semiconductor
apt5015bvfr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5015BVFRFEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.173. Size:376K inchange semiconductor
apt50m80b2vfr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT50M80B2VFRFEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.08(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

9.174. Size:255K inchange semiconductor
apt5010lfll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5010LFLLFEATURESDrain Current I =46A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.175. Size:375K inchange semiconductor
apt50m75b2ll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT50M75B2LLFEATURESDrain Current I = 57A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.075(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

9.176. Size:255K inchange semiconductor
apt5010lvr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5010LVRFEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

9.177. Size:375K inchange semiconductor
apt5024bvr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5024BVRFEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.24(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.178. Size:375K inchange semiconductor
apt5028bvr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5028BVRFEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.28(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.179. Size:375K inchange semiconductor
apt5020bvfr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5020BVFRFEATURESDrain Current I =26A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.180. Size:255K inchange semiconductor
apt50m65lfll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT50M65LFLLFEATURESDrain Current I = 67A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

9.181. Size:375K inchange semiconductor
apt5024bll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5024BLLFEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.24(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.182. Size:375K inchange semiconductor
apt5010b2fll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5010B2FLLFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

9.183. Size:375K inchange semiconductor
apt5015bvr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5015BVRFEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.184. Size:375K inchange semiconductor
apt5020bvr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5020BVRFEATURESDrain Current I =26A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

9.185. Size:255K inchange semiconductor
apt5010lvfr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5010LVFRFEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.186. Size:375K inchange semiconductor
apt5016bfll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5016BFLLFEATURESDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.16(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.187. Size:255K inchange semiconductor
apt50m80lvfr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT50M80LVFRFEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.08(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

9.188. Size:375K inchange semiconductor
apt5017bvr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5017BVRFEATURESDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.17(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.189. Size:375K inchange semiconductor
apt5018bfll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5018BFLLFEATURESDrain Current I =27A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.18(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.190. Size:375K inchange semiconductor
apt5010b2ll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5010B2LLFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.191. Size:376K inchange semiconductor
apt50m65b2fll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT50M65B2FLLFEATURESDrain Current I = 67A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

9.192. Size:375K inchange semiconductor
apt5016bll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5016BLLFEATURESDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.16(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.193. Size:375K inchange semiconductor
apt5017bvfr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5017BVFRFEATURESDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.17(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.194. Size:375K inchange semiconductor
apt5018bll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5018BLLFEATURESDrain Current I =27A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.18(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.195. Size:375K inchange semiconductor
apt5024bvfr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5024BVFRFEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.24(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.196. Size:255K inchange semiconductor
apt5010lll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT5010LLLFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.197. Size:376K inchange semiconductor
apt50m65b2ll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT50M65B2LLFEATURESDrain Current I = 67A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

9.198. Size:375K inchange semiconductor
apt50m75b2fll.pdf pdf_icon

isc N-Channel MOSFET Transistor APT50M75B2FLLFEATURESDrain Current I = 57A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.075(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

APT50N60JCCU2 Datasheet (PDF)

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APT50N60JCCU2 Datasheet (PDF)

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