All MOSFET. APT56F60L Datasheet

 

APT56F60L MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT56F60L
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1040 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 280 nC
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 1040 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO-264

 APT56F60L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT56F60L Datasheet (PDF)

 ..1. Size:124K  microsemi
 apt56f60b2 apt56f60l.pdf

APT56F60L APT56F60L

APT56F60B2 APT56F60L 600V, 60A, 0.11 Max, trr 290nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap

 ..2. Size:255K  inchange semiconductor
 apt56f60l.pdf

APT56F60L APT56F60L

isc N-Channel MOSFET Transistor APT56F60LFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.11(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 6.1. Size:375K  inchange semiconductor
 apt56f60b2.pdf

APT56F60L APT56F60L

isc N-Channel MOSFET Transistor APT56F60B2FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.11(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 8.1. Size:212K  microsemi
 apt56f50b2 apt56f50l.pdf

APT56F60L APT56F60L

APT56F50B2 APT56F50L 500V, 56A, 0.10 Max, trr 280nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap

 8.2. Size:375K  inchange semiconductor
 apt56f50b2.pdf

APT56F60L APT56F60L

isc N-Channel MOSFET Transistor APT56F50B2FEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 8.3. Size:255K  inchange semiconductor
 apt56f50l.pdf

APT56F60L APT56F60L

isc N-Channel MOSFET Transistor APT56F50LFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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