All MOSFET. RFD12N06RLESM Datasheet

 

RFD12N06RLESM MOSFET. Datasheet pdf. Equivalent


   Type Designator: RFD12N06RLESM
   Marking Code: 12N6LE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm
   Package: TO252AA

 RFD12N06RLESM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFD12N06RLESM Datasheet (PDF)

 ..1. Size:215K  fairchild semi
 rfd12n06rle rfd12n06rlesm rfp12n06rle.pdf

RFD12N06RLESM RFD12N06RLESM

RFD12N06RLE, RFD12N06RLESM,RFP12N06RLEData Sheet January 200217A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.063, VGS = 10VDRAIN DRAIN (FLANGE)GATE - rDS(ON) = 0.071, VGS = 5V (FLANGE)GATE Simulation ModelsSOURCE- Temperature Compensate

 ..2. Size:863K  onsemi
 rfd12n06rlesm.pdf

RFD12N06RLESM RFD12N06RLESM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 2.1. Size:835K  cn vbsemi
 rfd12n06rles.pdf

RFD12N06RLESM RFD12N06RLESM

RFD12N06RLESwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 9.1. Size:276K  international rectifier
 irfd123.pdf

RFD12N06RLESM RFD12N06RLESM

PD - 97015IRFD12306/09/05Document Number: 90161 www.vishay.com1IRFD123Document Number: 90161 www.vishay.com2IRFD123Document Number: 90161 www.vishay.com3IRFD123Document Number: 90161 www.vishay.com4IRFD123Document Number: 90161 www.vishay.com5IRFD123Document Number: 90161 www.vishay.com6IRFD123Peak Diode Recovery dv/dt Test Circuit+Circuit Lay

 9.2. Size:1821K  international rectifier
 irfd120pbf.pdf

RFD12N06RLESM RFD12N06RLESM

PD- 95928IRFD120PbF Lead-Free10/27/04Document Number: 91128 www.vishay.com1IRFD120PbFDocument Number: 91128 www.vishay.com2IRFD120PbFDocument Number: 91128 www.vishay.com3IRFD120PbFDocument Number: 91128 www.vishay.com4IRFD120PbFDocument Number: 91128 www.vishay.com5IRFD120PbFDocument Number: 91128 www.vishay.com6IRFD120PbFPeak Diode Recovery

 9.3. Size:176K  international rectifier
 irfd120.pdf

RFD12N06RLESM RFD12N06RLESM

 9.4. Size:1752K  vishay
 irfd123 sihfd123.pdf

RFD12N06RLESM RFD12N06RLESM

IRFD123, SiHFD123Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par

 9.5. Size:1831K  vishay
 irfd123pbf.pdf

RFD12N06RLESM RFD12N06RLESM

IRFD123, SiHFD123Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par

 9.6. Size:1828K  vishay
 irfd120 sihfd120.pdf

RFD12N06RLESM RFD12N06RLESM

IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par

 9.7. Size:1829K  vishay
 irfd120pbf sihfd120.pdf

RFD12N06RLESM RFD12N06RLESM

IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par

Datasheet: RF1S9530SM , RF1S9540SM , RF1S9630SM , RF1S9640SM , RFB18N10CS , RFD10P03L , RFD10P03LSM , RFD12N06RLE , SKD502T , RFD14N05 , RFD14N05L , RFD14N05LSM , RFD14N05SM , RFD14N06L , RFD14N06LSM , RFD15N06LE , RFD15N06LESM .

 

 
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